(25 pt.) 01. Transmission gate (TG) switch is superior to nMOS or pMOS switch Asu (W/L)Mi-1/0.12 ...
(30 pt.) Q1. Transmission gate (TG) switch is superior to nMOS or pMOS switch. Assume (W/L)MI-1/0.13 and (W/L)M2-1/0.13. a) Label the Gate source drain in the TG shown below. b) Determine the Rag (equivalent resistance) of the TG switch for Vout-0.6 V c) Estimate the output capacitance for Vout-0.6V 1.2 V M2 1.2V Vout M1 ov (30 pt.) Q1. Transmission gate (TG) switch is superior to nMOS or pMOS switch. Assume (W/L)MI-1/0.13 and (W/L)M2-1/0.13. a) Label the Gate source drain...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
Table 1 Parameters for manual model of 0.18 micron CMos process (minimum length device 0.46 0.42 NMOS PMOS 0.42 0.35 -0.88 317 0.26 0.107 67.6 Prob. 1 Schmitt trigger. Assume the inverter in Figure 1 has a swtching threshold voltage, VM 0.9 V and VDD-1.8 v. Use the following transistor parameter; Let (W/Di = 1/0.18, (W/L)2-2/0. 18. Size transistors M3 and M4 such that when Vin is swept from 0 to 1.8, Vout will switch at Vin= 1.1 V and...