solve each part separately and indicate answer to each part clearly.
Solve each part separately and indicate answer to each part clearly.
Design a common-source MOSFET amplifier such that - Rg is a multiple of 10 - Id = 0.52 mA - the amplifier input resistance is in the range of mega ohms - | Avo | = 16.7 V/V - RL = 20k - Vsig has a 2kHz frequency - Rsig = 400k, and is the input and the MOSFET has: Vt = 0.8V k = 5 mA/V^2 VA = 80 V Assume capacitors are shorted in the signal circuit and...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
D 6.112 The MOSFET in the circuit of Fig. P6.112 has = 5 mA/V, and V, = 40 V. (a) Find the values of Rs,RD, and RG so that ID=0.4 mA, the largest possible value for R is used while a maximum signal swing at the drain of +0.8 V is possible, and the input resistance at the gate is 10 MS2. Neglect the Early effect. (b) Find the values of gm and r, at the bias point. (c) If...
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the following parameters: K'-1 mA/V2 and λ-0.02 w. v°' is a small signal AC voltage ource 8V 8V Vout Ra 2.56 mA Fig. Q6 (a) Calculate the DC gate voltage, Va. (b) Assuming that the n-MOSFET is operating in the saturation region and neglecting channel length modulation, calculate the threshold voltage, VrHN, given that the voltage drop across the de current sorce, Inas, has been...
Design a common-source MOSFET amplifier such that RG is a multiple of D = o.st mot (Avol 15.02 VN RL = 17kr • Choose a sinusoidal signal voltage, Vsig, with Rsig = 400 kN to use as the input in this problem. Use 2 kHz as the frequency of your sinusoidal. This is a design problem so vsig will not be unique. Use V+ = 0.8 V, k = 5 mA/V2, and VA = 80 V for your MOSFET. Assume...
Please help, and explain as much as possible. Thank you! 2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether2 as shown in Figre 2. Assume that the MOSFET has trans-conductance parameter of gm = 0.5mA/V and the threshold voltage of 0.7V (a) Identify in which region the n-channel MOSFET is operating (Triode region or Saturation region)? (b) Write MATLAB code to compute the drain current for the following gate-to-source voltage, Vcs Ves-VDs 0,1,2,3,4,5,6,7...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits...
D-17.121 The MOSFET in the circuit of Fig. P7.121 has V, 0.8 V, k,-5 mA/V", and V,-40 V (a) Find the values of Rş, Rp, and Ro so that Ip 0.4 mA, the largest possible value for Rp is used while a maximum signal swing at the drain of ±0.8 V is possible, and the input resistance at the gate is 10 M2. Neglect the Early effect. (b) Find the values of g and r at the bias point. (c)...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
6.108 (d) Section 6.5: Discrete-Circuit Amplifiers 6.107 Calculate overall voltage gain G, of a 3 mA/V, ro= = 10 MS2. The amplifier is the common-source amplifier for which g 100 k2, RD 10 k2, and RG fed from a signal source with a Thevenin resistance of l M2, and the amplifier output is coupled of 20 k2 to a load resistance SIM 6.108 The NMOS transistor in the CS amplifier shown in Fig. P6.108 has V, = 0.7 V and...