Peak Rectifiers
Lets consider the Half Wave Rectifier with Capacitor for smoothing the voltage profile (with less ripples)
(Assuming Diode to be Ideal)
Add capacitor in parallel with the Load as show an below
Here Capacitor charges during positive cycle and discharge during the Negative cycle
To make the voltage profile smooth we need to increase the discharging time (so that it discharges slowly)
For this we need to use large value of capacitor C and R is the given load in the circuit
Now drawing the output voltage waveform vo and output current waveform iLand Diode current waveform iD
We’ll require that
i.e. time constant of the RC circuit must be much greater that the
period of input sinusoidal signal. so the response of the waveform
will be like
Now we have to determine the Ripple voltage
Vr in the output; Assuming
When diode is OFF; ..........................(1)
At the end of the discharge time,td, the output voltage equals
...........................(2)
Substituting the Vo from eq(1) at this time td
. .........................(3)
So, We have to proceed to determine the Conduction
Interval of diode , it
is the time for which the diode is conducting the current, as we
have seen in the above waveforms
The diode conduct from time td to T , using eq (4) at time td will give following Eq
or
(9)
The conduction interval is assumed to very small therefore Truncating the series expansion of cosine to 2 terms Result in
Hence Conduction angle of the diode is proved above
Thankyou
Calculate the diode conduction time (in seconds) for the US 120V (rms), 50 Hz operation of a half wave rectifier. The transformer primary to secondary ratio is 10 and during the diode conduction it charges a battery to 10V. Assume Vγ = 0.7V
A MOSFET and diode is used in a circuit shown in figure. The operating conditions are as follows: Input Voltage = VIN = 42 V, Io = 5A. Switching frequency fs = 400 kHz, Duty-cycle = D = 0.3. Diode Forward Voltage drop = 0.7V. Diode Peak Reverse Recovery Current = IRRM = 2.5 A. ON-state resistance of the MOSFET is RDS (on) = 25 mΩ. VGG as a step voltage between 0V and 10 V. MOSFET timings – Td...
proof this formula
Diode average current:
Diode average current:
A class AB amplifier is defined as an amplifier with a conduction angle between 180 degrees and 360 degrees. Select one 0 a. False O b. True As a general rule of thumb, an oscilloscope must pass up to at least the harmonic for a reasonable representation of the signal.
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...
w A ovo 3. (15 pts) The input Vg to the rectifier circuit on the right is a sinusoidal signal of amplitude 4V, as shown below. Use the 0.7V voltage drop model for the diode. a) Determine the maximum and minimum values of the output voltage V across load resistor RL. b) Determine the conduction angle. c) Determine the percent conduction. 10022 {RL 2002 3. (15 pts) The input to the rectifier circuit on the right is sinusoidal signal of...
Of the following DIODES: • PIN DIODE • TUNNEL DIODE • GUN DIODE • LASER DIODE Research: a) Specific construction characteristics b) Function description c) Symbol d) Main applications Thank a lot.
The gap between the valence and conduction bands of a certain semiconductor is 0.85eV. When this semiconductor is used to form a light emitting diode, the wavelength of the light emitted: A) is in a range above 1.5 × 10–6 m B) is in a range below 1.5 × 10–6 m C) is always 1.5 × 10–6 m D) is in a range centered on 1.5 × 10–6 m
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Learning Goal: To understand the heat conduction formula and the variables in it. Conduction—the flow of heat from a hotter object to a cooler object or from a hotter region to a cooler region of the same object—is the most common mechanism of heat transfer. The formula governing this is H=ΔQ/Δt=kA((TH−TC)/L), where H is known as the heat current. Part D The quantity ΔQ/Δt is the rate of heat removed from the cold end of the rod to maintain its...