Question

3) Consider you created uniformly doped GaAs pn junction. At zero bias, only 20 percent of the depletion region length is to be in the p region. The built-in barrier Vf-1.2V and at 300HK temperature. For zero bias, determine Na, Nd, Xn, Xp and Emax with assumption of 250 nm of depletion region length

Answer 1

Solution:

Given that

iyen that et toal ett LO Ah na Ad

X T (8リ Garls

c) EFIB ta. duh !!!.xxte'ь /9 1-1구 x10

d) 0085 m 29 -で Ne 1-2 封 be Notinuun elect all