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5 V 1. CMOS Inverter: Consider a CMOS inverter shown on the right. 2-1 For PMOS: ZIL-10, μ,-400 c...
CMOS Design Styles Quiz Problem 1: a) What is the typical "topology" for pMOS and nMOS...
CMOS Design Styles Quiz Problem 1: a) What is the typical "topology" for pMOS and nMOS in digital circuitry? -pMOS Vdd to Vout, nMOS Vout to Gnd -nMOS Vdd to Vout, pMOS Vout to Gnd -pMOS Vdd to Gnd, nMOS Vin to Vout -Only use xMOS -Both transistors Vin to Vout b) How do you implement nMOS in AND functions? -series connected, with increased widths -Parallel connected, with standard widths -Series connected with half the widths -Parallel connected, alternating large...
Table 1 Parameters for manual model of 0.18 micron CMos process (minimum length device 0.46 0.42 NMOS PMOS 0.42 0.35 -0.88 317 0.26 0.107 67.6 Prob. 1 Schmitt trigger. Assume the inverter in Figu...
Table 1 Parameters for manual model of 0.18 micron CMos process (minimum length device 0.46 0.42 NMOS PMOS 0.42 0.35 -0.88 317 0.26 0.107 67.6 Prob. 1 Schmitt trigger. Assume the inverter in Figure 1 has a swtching threshold voltage, VM 0.9 V and VDD-1.8 v. Use the following transistor parameter; Let (W/Di = 1/0.18, (W/L)2-2/0. 18. Size transistors M3 and M4 such that when Vin is swept from 0 to 1.8, Vout will switch at Vin= 1.1 V and...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NM...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
help me please subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three...
help me please
subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
Quiz# 5 & 6: Intro to VLSI Design Name: Use Cadence to find the VTC (Voltage Transfer Characteris...
Quiz# 5 & 6: Intro to VLSI Design Name: Use Cadence to find the VTC (Voltage Transfer Characteristics) plot for a CMOS inverter to get Vout Vs Vin. From those plots find the NMi. and NMH for following two W/L ratio: 1. a. Both nMOS and pMOS transistor with same W/L: 1.5 μm /06μm b. Both nMOS and pMOS transistor with same W/L: 15 μm /0.6μm
Quiz# 5 & 6: Intro to VLSI Design Name: Use Cadence to find the...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
CMOS VTC (10) hursday, July 05, 2012 2:47 PM 20 1 |vTNwTPalV-W/L=1/1 for NMOS, 2/1 fo...
CMOS VTC (10) hursday, July 05, 2012 2:47 PM 20 1 |vTNwTPalV-W/L=1/1 for NMOS, 2/1 fo r PMOS. KP=20? for NMOS, and 101A/V2 forPMOS.VDD- 1) Is the CMOS design symmetric or 2) For an input voltage of 3V, draw NMOS and PMOs currents as a function of Vout, labet points of transitor saturation with current and voltage values. Indicate approximate location of the actual CMOS inverter output voltage in the previous step. 3)
Compute the following for the pseudo-NMOS inverter shown in Figure. VTn=0.45V. VTp=. 0.45V kn-115uA/V2.kp'--304A/V2, VDSATn=0.4V, VDSATp=...
Compute the following for the pseudo-NMOS inverter shown in Figure. VTn=0.45V. VTp=. 0.45V kn-115uA/V2.kp'--304A/V2, VDSATn=0.4V, VDSATp= -0.4V. Transistors are short channel devices. a. VOL and VOH b. Which is expected to have a higher value? NML or NMH? Why? c. Why is the circuit called a pseudo-NMOS inverter? d. The power dissipation: (1) for Vin low, and (2) for Vin high. Output load is 1 pF e. For an output load of 1 pF, calculate tpLH and tpHL. Are the...
with details and explanations 4. The layout of a CMOS complex logic circuit is eiven in the Figure 1 (10 Marks) Calculate the (/equvalent of all the nMoS and PMOS transistors for simultaneous swit...
with details and explanations
4. The layout of a CMOS complex logic circuit is eiven in the Figure 1 (10 Marks) Calculate the (/equvalent of all the nMoS and PMOS transistors for simultaneous switching of all the inputs, assuming that (W/1), 15 for all pMOS transistors and (W/L), 5 for all nMOS Draw the corresponding circuit diagram; and a. b. (10 Marks) transistors Vdd PMOS NMOS GND Figure 1
4. The layout of a CMOS complex logic circuit is eiven...
19. Consider the CMOS inverter below with VDo-5.0 V and device parameters: p-channel K--2.5mA/V2, Vi--4.0V n-channel K...
19. Consider the CMOS inverter below with VDo-5.0 V and device parameters: p-channel K--2.5mA/V2, Vi--4.0V n-channel K = 2.5 mA V, Vt = 2.0V Find the output voltage for Vin -2.0, 3.0, and 4.0 V VDD UGSP -channel" MOSFET P UP Series "load" element O VOUT n-channel MOsw.헤. QN Active device UIN UGSN
19. Consider the CMOS inverter below with VDo-5.0 V and device parameters: p-channel K--2.5mA/V2, Vi--4.0V n-channel K = 2.5 mA V, Vt = 2.0V Find the output...
Table 1 Parameters for manual model of 0.18 micron CMos process (minimum length device 0.46 0.42 NMOS PMOS 0.42 0.35 -0.88 317 0.26 0.107 67.6 Prob. 1 Schmitt trigger. Assume the inverter in Figure 1 has a swtching threshold voltage, VM 0.9 V and VDD-1.8 v. Use the following transistor parameter; Let (W/Di = 1/0.18, (W/L)2-2/0. 18. Size transistors M3 and M4 such that when Vin is swept from 0 to 1.8, Vout will switch at Vin= 1.1 V and...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
help me please
subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
Quiz# 5 & 6: Intro to VLSI Design Name: Use Cadence to find the VTC (Voltage Transfer Characteristics) plot for a CMOS inverter to get Vout Vs Vin. From those plots find the NMi. and NMH for following two W/L ratio: 1. a. Both nMOS and pMOS transistor with same W/L: 1.5 μm /06μm b. Both nMOS and pMOS transistor with same W/L: 15 μm /0.6μm
Quiz# 5 & 6: Intro to VLSI Design Name: Use Cadence to find the...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
CMOS VTC (10) hursday, July 05, 2012 2:47 PM 20 1 |vTNwTPalV-W/L=1/1 for NMOS, 2/1 fo r PMOS. KP=20? for NMOS, and 101A/V2 forPMOS.VDD- 1) Is the CMOS design symmetric or 2) For an input voltage of 3V, draw NMOS and PMOs currents as a function of Vout, labet points of transitor saturation with current and voltage values. Indicate approximate location of the actual CMOS inverter output voltage in the previous step. 3)
Compute the following for the pseudo-NMOS inverter shown in Figure. VTn=0.45V. VTp=. 0.45V kn-115uA/V2.kp'--304A/V2, VDSATn=0.4V, VDSATp= -0.4V. Transistors are short channel devices. a. VOL and VOH b. Which is expected to have a higher value? NML or NMH? Why? c. Why is the circuit called a pseudo-NMOS inverter? d. The power dissipation: (1) for Vin low, and (2) for Vin high. Output load is 1 pF e. For an output load of 1 pF, calculate tpLH and tpHL. Are the...
with details and explanations
4. The layout of a CMOS complex logic circuit is eiven in the Figure 1 (10 Marks) Calculate the (/equvalent of all the nMoS and PMOS transistors for simultaneous switching of all the inputs, assuming that (W/1), 15 for all pMOS transistors and (W/L), 5 for all nMOS Draw the corresponding circuit diagram; and a. b. (10 Marks) transistors Vdd PMOS NMOS GND Figure 1
4. The layout of a CMOS complex logic circuit is eiven...
19. Consider the CMOS inverter below with VDo-5.0 V and device parameters: p-channel K--2.5mA/V2, Vi--4.0V n-channel K = 2.5 mA V, Vt = 2.0V Find the output voltage for Vin -2.0, 3.0, and 4.0 V VDD UGSP -channel" MOSFET P UP Series "load" element O VOUT n-channel MOsw.헤. QN Active device UIN UGSN
19. Consider the CMOS inverter below with VDo-5.0 V and device parameters: p-channel K--2.5mA/V2, Vi--4.0V n-channel K = 2.5 mA V, Vt = 2.0V Find the output...
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