(a) The optical gain coefficient of a semiconductor laser with 150 μm cavity length is shown in Fig 1. The loss coefficient and the refractive index of the semiconductor laser are 21.6 cm" and 3....
(a) The optical gain coefficient of a semiconductor laser with 150 μm cavity length is shown in Fig 1. The loss coefficient and the refractive index of the semiconductor laser are 21.6 cm" and 3.5 respectively. Find (i)The minimum gain coefficient required for lasing (ii) The frequency separation between the longitudinal modes of the laser (iii) The number of longitudinal modes emitted (b) This laser is required to produce a single mode output at a wavelength of 1.32 unm If gratings are used for this purpose, determine the design pitch of the grating that must be used (ii)Indicate the reasons for the great interest in such single mode semiconductor lasers Note. The power reflectivity of a surface between two materials of refractive indices ni and n is given by: Optical Gain 100 50 Coefficient cm 1.298 1.300 1.336 1.338 Wavelength (um) Fig. 1.
(a) The optical gain coefficient of a semiconductor laser with 150 μm cavity length is shown in Fig 1. The loss coefficient and the refractive index of the semiconductor laser are 21.6 cm" and 3.5 respectively. Find (i)The minimum gain coefficient required for lasing (ii) The frequency separation between the longitudinal modes of the laser (iii) The number of longitudinal modes emitted (b) This laser is required to produce a single mode output at a wavelength of 1.32 unm If gratings are used for this purpose, determine the design pitch of the grating that must be used (ii)Indicate the reasons for the great interest in such single mode semiconductor lasers Note. The power reflectivity of a surface between two materials of refractive indices ni and n is given by: Optical Gain 100 50 Coefficient cm 1.298 1.300 1.336 1.338 Wavelength (um) Fig. 1.