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10. The number of conduction electrons in a semiconductor can be calculated as n-ne e Given that n 1010 cm23 for pure s...
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi ene...
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
Question 8 Pure silicon at room temperature has an electron number density of about 5 ×...
Question 8 Pure silicon at room temperature has an electron number density of about 5 × 1015 m3 and an equal density of holes In the valence band. Suppose that one of every 10° silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
e Calculate the position of EF with respect to E. 5. Explain why holes are found...
e Calculate the position of EF with respect to E. 5. Explain why holes are found wny holes are found near the top of the valence band, whereas conduction electrons are found at the bottom of the conduction band. O. Using the Figure 3-17 in your text (also attached), fill in the following table: Semiconductor 300°K 400°K 500°K Ge GaAs For Ge at 500°K and Si at 400°K, show on the attached graph how you determined the value you put...
(10 points) Lithium has one valence electron per atom that can be modeled as free electrons. Consider a Lithium sample made up of n 4.7 x 102 e/cm a) Determine the Fermi energy of Lithium. b) Calc...
(10 points) Lithium has one valence electron per atom that can be modeled as free electrons. Consider a Lithium sample made up of n 4.7 x 102 e/cm a) Determine the Fermi energy of Lithium. b) Calculate the Fermi temperature and the electron velocity at the Fermi surface c) Determine the value of the relaxation time and the mean free path of the conduction 2. electrons if the resistivity is approximately 10-5n.cm at room temperature. d) Calculate the specific heat...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
Question 8 Pure silicon at room temperature has an electron number density of about 5 × 1015 m3 and an equal density of holes In the valence band. Suppose that one of every 10° silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
e Calculate the position of EF with respect to E. 5. Explain why holes are found wny holes are found near the top of the valence band, whereas conduction electrons are found at the bottom of the conduction band. O. Using the Figure 3-17 in your text (also attached), fill in the following table: Semiconductor 300°K 400°K 500°K Ge GaAs For Ge at 500°K and Si at 400°K, show on the attached graph how you determined the value you put...
(10 points) Lithium has one valence electron per atom that can be modeled as free electrons. Consider a Lithium sample made up of n 4.7 x 102 e/cm a) Determine the Fermi energy of Lithium. b) Calculate the Fermi temperature and the electron velocity at the Fermi surface c) Determine the value of the relaxation time and the mean free path of the conduction 2. electrons if the resistivity is approximately 10-5n.cm at room temperature. d) Calculate the specific heat...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
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