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This is a solid state physics problem. ( I use this book : kittel introduction to...
#2 This is a solid state physics problem. ( I use this book : kittel introduction...
#2
This is a solid state physics problem. ( I use this book : kittel
introduction to soild state physocs ) thank you !
5. [Graphene] Consider graphene, a hexagonal lattice of carbon atoms as shown in the figure. The distance between neighboring carbon atoms is a0.143 nm (a) B A (a) Write down the unit lattice vectors ā, and a and unit reciprocal lattice vectors b, and b,. [5] a2 (b) The two sites A and B are not...
The reference book is Charles Kittel-Introduction to Solid State Physics. 1. The energy bands at the...
The reference book is Charles Kittel-Introduction to Solid State
Physics.
1. The energy bands at the top of the valence bands in Si are three-fold degenerate (neglecting spin). The secular determinant for states near k 0 can be obtained by perturbation theory and is Ck,kz Ckxkz y z where E is the energy of the state k (kx, ky, kz), and A, B, and C are components of the reciprocal mass tensor. Find an expression for the energy bands near...
Band structure Consider a one-dimensional semiconductor crystal consisting of 11 atoms with nearest- neighbor atoms separated...
Band structure Consider a one-dimensional semiconductor crystal consisting of 11 atoms with nearest- neighbor atoms separated by a 5 . The band structure for electrons in the conduction band is given by Ec(k) = 101(k-0.2n)2-A(k-02n)"] + 2.25 [eV] and the band structure for holes in the valence band is given by where the wavevector k s in units ofA-1. The allowed wavevectors are--< k 즈 al (a) Is this a direct or indirect gap semiconductor? What is the energy gap...
help plzz 4. (2 points) An electron in a semiconductor material's conduction band is initially at...
help plzz
4. (2 points) An electron in a semiconductor material's conduction band is initially at the electronic state corresponding to wavevector k = (kx, ky,k,), where kz = 3 x 10'm-7, and ky = k, = 0. The effective mass of the semiconductor conduction band is m = 0.1mo. At some moment, this electron absorbed an acoustic phonon with a wavevector of a = (92,9y, 92), where 9x = -5 X 107m 1,4y = 2.5 X 107m 1,9, =...
E(k)t Er K. 4. (Advanced Level) Graphene is a special type of material which is two- dimensional and has a linear E...
E(k)t Er K. 4. (Advanced Level) Graphene is a special type of material which is two- dimensional and has a linear E-k diagram. The conduction and valence bands touch each other at a singularity, known as the Dirac point. In the unexcited state, the valence band is completely filled, while the conduction band is completely empty From the E-k diagram shown above, deduce the equation of the E-k curve. Hence, from the equation you deduced, speculate the special properties of...
3. The figure below shows a schematic of the dispersion for the conduction and valence bands...
3. The figure below shows a schematic of the dispersion for the conduction and valence bands for particular semiconductor. The conduction band has dispersion equation a 10-35 E (3 x 10 19) [2 x 10 and the valence band has dispersion equation E (4 x 10-37A2 where in both cases E is in units of joules and k in units of m1 E 6x 10-19 J 2 6 x 10 m -6 -4 -2 2 k (a) Is this a...
This is a physics question, I selected physics but it shows chemistry here, somehow...... The group...
This is a physics question, I selected physics but it shows
chemistry here, somehow......
The group I element potassium (K) forms the bcc crystal structure with the cubic-lattice parameter a=0.533 nm. Each atom contributes 1 electron to the conduction band. (a) Calculate the number of electrons per m-3 in the conduction band for potassium. (b) Calculate the Fermi energy for potassium in units of eV. The figure below shows the Brillouin Zone (the reciprocal cell) for the bcc crystal that...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
(b) Flgure 3 shows an ideallsed schematic of a PL and PLE spectrum at 4.2K from a GaAs/AIGaAs multi QW (MOW) structure. Assuming the excitation power is low, and assuming the Infinite well approxi...
(b) Flgure 3 shows an ideallsed schematic of a PL and PLE spectrum at 4.2K from a GaAs/AIGaAs multi QW (MOW) structure. Assuming the excitation power is low, and assuming the Infinite well approximation, estimate; ü) the width of the well in nm (l) the exciton binding energy in the well With reasoning, state whether thls calculated well width would be an upper or lower limit to the well width in a real GaAs/A GaAs MQW 2] This MQW structure...
#2
This is a solid state physics problem. ( I use this book : kittel
introduction to soild state physocs ) thank you !
5. [Graphene] Consider graphene, a hexagonal lattice of carbon atoms as shown in the figure. The distance between neighboring carbon atoms is a0.143 nm (a) B A (a) Write down the unit lattice vectors ā, and a and unit reciprocal lattice vectors b, and b,. [5] a2 (b) The two sites A and B are not...
The reference book is Charles Kittel-Introduction to Solid State
Physics.
1. The energy bands at the top of the valence bands in Si are three-fold degenerate (neglecting spin). The secular determinant for states near k 0 can be obtained by perturbation theory and is Ck,kz Ckxkz y z where E is the energy of the state k (kx, ky, kz), and A, B, and C are components of the reciprocal mass tensor. Find an expression for the energy bands near...
Band structure Consider a one-dimensional semiconductor crystal consisting of 11 atoms with nearest- neighbor atoms separated by a 5 . The band structure for electrons in the conduction band is given by Ec(k) = 101(k-0.2n)2-A(k-02n)"] + 2.25 [eV] and the band structure for holes in the valence band is given by where the wavevector k s in units ofA-1. The allowed wavevectors are--< k 즈 al (a) Is this a direct or indirect gap semiconductor? What is the energy gap...
help plzz
4. (2 points) An electron in a semiconductor material's conduction band is initially at the electronic state corresponding to wavevector k = (kx, ky,k,), where kz = 3 x 10'm-7, and ky = k, = 0. The effective mass of the semiconductor conduction band is m = 0.1mo. At some moment, this electron absorbed an acoustic phonon with a wavevector of a = (92,9y, 92), where 9x = -5 X 107m 1,4y = 2.5 X 107m 1,9, =...
E(k)t Er K. 4. (Advanced Level) Graphene is a special type of material which is two- dimensional and has a linear E-k diagram. The conduction and valence bands touch each other at a singularity, known as the Dirac point. In the unexcited state, the valence band is completely filled, while the conduction band is completely empty From the E-k diagram shown above, deduce the equation of the E-k curve. Hence, from the equation you deduced, speculate the special properties of...
3. The figure below shows a schematic of the dispersion for the conduction and valence bands for particular semiconductor. The conduction band has dispersion equation a 10-35 E (3 x 10 19) [2 x 10 and the valence band has dispersion equation E (4 x 10-37A2 where in both cases E is in units of joules and k in units of m1 E 6x 10-19 J 2 6 x 10 m -6 -4 -2 2 k (a) Is this a...
This is a physics question, I selected physics but it shows
chemistry here, somehow......
The group I element potassium (K) forms the bcc crystal structure with the cubic-lattice parameter a=0.533 nm. Each atom contributes 1 electron to the conduction band. (a) Calculate the number of electrons per m-3 in the conduction band for potassium. (b) Calculate the Fermi energy for potassium in units of eV. The figure below shows the Brillouin Zone (the reciprocal cell) for the bcc crystal that...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
(b) Flgure 3 shows an ideallsed schematic of a PL and PLE spectrum at 4.2K from a GaAs/AIGaAs multi QW (MOW) structure. Assuming the excitation power is low, and assuming the Infinite well approximation, estimate; ü) the width of the well in nm (l) the exciton binding energy in the well With reasoning, state whether thls calculated well width would be an upper or lower limit to the well width in a real GaAs/A GaAs MQW 2] This MQW structure...
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