A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns...

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A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above the middle of the bandgap? b. How many possible states are available for an electron to occupy at 0.5eV above mid-gap? c. What is the probability of finding an electron 0.9eV above the middle of the bandgap? d. How many possible states are available for an electron to occupy at 0.9eV above mid-gap?

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o.S_ e v above the mf date of the land ga p TS p(€) -3.83メ10 = 2Tme KT 3 ) n dli (E-EEKT ossele S

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A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns...

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A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns...

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