Estimate the temperature at which GaAs has an electrical conductivity of 1.6 × 10–3 (Ω•m)–1, assuming the temperature dependence for σ of Equation 18.36. The data shown in Table 18.3 may prove helpful.
Table 18.3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials
Material | Band Gap (eV) | Electron Mobility (m2/V•s) | Hole Mobility (m2/V•s) | Electrical Conductivity (Intrinsic)(Ω•m)–1 |
|
| Elemental |
|
|
Ge | 0.67 | 0.39 | 0.19 | 2.2 |
Si | 1.11 | 0.145 | 0.050 | 3.4 × 10–4 |
|
| III–V Compounds |
|
|
AlP | 2.42 | 0.006 | 0.045 | — |
AlSb | 1.58 | 0.02 | 0.042 | — |
GaAs | 1.42 | 0.80 | 0.04 | 3 × 10–7 |
GaP | 2.26 | 0.011 | 0.0075 | — |
InP | 1.35 | 0.460 | 0.015 | 2.5 × 10–6 |
InSb | 0.17 | 8.00 | 0.125 | 2 × 104 |
|
| II–VI Compounds |
|
|
CdS | 2.40 | 0.040 | 0.005 | — |
CdTe | 1.56 | 0.105 | 0.010 | — |
ZnS | 3.66 | 0.060 | — | — |
ZnTe | 2.4 | 0.053 | 0.010 | — |
Source: This material is reproduced with permission of John Wiley&Sons, Inc.
(18.36)
We need at least 10 more requests to produce the solution.
0 / 10 have requested this problem solution
The more requests, the faster the answer.