(a) The room-temperature electrical conductivity of a silicon specimen is 500 (Ω•m)–1. The hole concentration is known to be 2.0 × 1022 m–3. Using the electron and hole mobilities for silicon in Table 18.3, compute the electron concentration.
(b) On the basis of the result in part (a), is the specimen intrinsic, n-type extrinsic, or p-type extrinsic? Why?
Table 18.3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials
Material | Band Gap (eV) | Electron Mobility (m2/V•s) | Hole Mobility (m2/V•s) | Electrical Conductivity (Intrinsic)(Ω•m)–1 |
|
| Elemental |
|
|
Ge | 0.67 | 0.39 | 0.19 | 2.2 |
Si | 1.11 | 0.145 | 0.050 | 3.4 × 10–4 |
|
| III–V Compounds |
|
|
AlP | 2.42 | 0.006 | 0.045 | — |
AlSb | 1.58 | 0.02 | 0.042 | — |
GaAs | 1.42 | 0.80 | 0.04 | 3 × 10–7 |
GaP | 2.26 | 0.011 | 0.0075 | — |
InP | 1.35 | 0.460 | 0.015 | 2.5 × 10–6 |
InSb | 0.17 | 8.00 | 0.125 | 2 × 104 |
|
| II–VI Compounds |
|
|
CdS | 2.40 | 0.040 | 0.005 | — |
CdTe | 1.56 | 0.105 | 0.010 | — |
ZnS | 3.66 | 0.060 | — | — |
ZnTe | 2.4 | 0.053 | 0.010 | — |
Source: This material is reproduced with permission of John Wiley&Sons, Inc.
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