a. Determine VDS for VGS = 0 V and ID = 6 mA using the characteristics of Fig. 6.11
b. Using the results of part (a), calculate the resistance of the JFET for the region ID = 0 to 6 mA for VGS= 0V.
c. Determine VDS for VGS = −1V and ID = 3 mA.
d. Using the results of part (c), calculate the resistance of the JFET for the region ID = 0 to 3 mA for VGS = −1V.
e. Determine VDS for VGS = −2 V and ID = 1.5 mA.
f. Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to 1.5 mA for VGS = −2V.
g. Defining the result of part (b) as ro, determine the resistance for VGS = −1 V using Eq. (6.1) and compare with the results of part (d).
h. Defining the result of part (b) as ro, determine the resistance for VGS = −2 V using the same equation, and compare the results with part (f).
i. Based on the results of parts (g) and (h), does Eq. 6.1, appear to be a valid approximation?
FIG. 6.11 n-Channel JFET characteristics with IDSS = 8 mA and VP = -4 V.
(6.1)
We need at least 8 more requests to produce the solution.
2 / 10 have requested this problem solution
The more requests, the faster the answer.