What are the major differences between the collector characteristics of a BJT transistor and the drain characteristics of a JFET transistor? Compare the units of each axis and the controlling variable. How does IC react to increasing levels of IB versus changes in ID to increasingly negative values of VGS ? How does the spacing between steps of IB compare to the spacing between steps of VGS ? Compare to VP in defining the nonlinear region at low levels of output voltage.
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