Using IDSS = 9 mA and VP = −3 V for the characteristics of Fig. 6.22, calculate ID at VGS...

Using I_DSS = 9 mA and V_P = −3 V for the characteristics of Fig. 6.22, calculate I_D at V_GS = −1 V using Shockley’s equation and compare to the level in Fig. 6.22

FIG. 6.22 Drain characteristics for a 2N4416 JFET transistor as displayed on a curve tracer.