4.3V (15 pts) For the circuit shown, Rc = 2 kQ. Assume that VBE-0.7V, and that...
Problem 5 Given the following circuit, assume the following parameters VBB IV, RB 220 k, RC = 2 k, VCC= 10 V, VBE(on)-0.7 V, and B 200 a) Calculate the base, collector, and emitter currents and the C-E voltage, also, calculate the transistor power dissipation b) What transistor configuration does the circuit resemble? Vcc=10V RC=2k Rg=220 kQ VCE VBB= 1V o + VRE IB
Please answer clearly 2. Consider the circuit shown in Figure 1. Determine values of Ri, R2, and Rc to provide the quiescent emitter current 1.5 mA and the quiescent collector to emitter voltage 5V. Assume β 100, Re-I㏀、Va= 200V, VBEon-0.7V, and VT= 25mV. R1 Rc Vcc に 10v R2 Re Figure 1: BJT biasing configuration 2. Consider the circuit shown in Figure 1. Determine values of Ri, R2, and Rc to provide the quiescent emitter current 1.5 mA and the...
2) Consider the circuit below. Assume B=49 A/A, VBe=0.7V, VCEsat=0.2V. If the Collector current is Ic = 9.8 mA, Find Vc, VE, VB and VBB; as well as the currents IE and IB. Hint: VBB>0. Verify your assumption. 15V V BB ic 3 Rc CS 30622 AVC RB 10k 2 B E → VE ięRE ES 33012
Question #3 (14 points) Assume: B = 100 when active VBE = 0.7V when the base-emitter junction is forward-biased. VCE (SAT) = 0.2V (8 points) a) Compute the value for RE to establish a DC emitter current of 0.5mA. Assume the BJT is operating in the active region. (6 points) b) Compute the range of RC values that would ensure the BJT is operating in the active region.
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
1. Consider the emitter-stabilized circuit shown below Vcc-15V RB 430kΩ Rc 1.6k2 IB β = 125 RE a) Find b, k, and VCE for the circuit as shown, with β = 125 b) Suppose that β can vary in the range from 100 to 150 due to manufacturing variations. What is the resulting range in Vce? c) What is the requirement on β such that the transistor will not saturate?
DC Biasing For the circuit below, assume 150, VBE(ON) -0.7V and Vce(SAT)- 0.2V Voc 10 VO Rc 3.3K ib Rb 330K Write an equation for ib in terms of Vin (Hint: use KVL from VBB to ground) Write the general equation for ic in terms of ib and P Write an equation for Vce in terms of ic CE- Fill the table Operational Region 0 V 3 V 5 V 7 V
0.7V, and Va 100V. Find: -For the operational amplifier of Figure 4 assume all transistors have β-100, Find the de emitter currents and the de collector voltage of all transistors. The de voltage at the inputs is OV and the de output voltage is held at 0V (by negative feedback, not shown). Neglect the de base currents for this part. Find the (differential) voltage gain of the amplifier with R-10 k2. Assume the impedance of the capacitor is very large....
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of the base collector current IC. (In mA) 3) Calculate the value of the collector-emitter voltage VCE. (In V) Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
3. For the ECL gate shown in the following sketch, the output is Y and the input is A Rc 7S2 Q5 VRE 02 AQ 50Ω D2 5.2V For parts (a) and (b), assume VBE 0.7V for forward-biased diodes and transistors with significant collector current, and neglect the base currents. Also assume that the ratio ic/ica when the input is high is equal to the ratio icz/icı when the input is low. Find (a) the output high and low voltage...