2. Calculate the current when a 100mV bias is applied across a ballistic graphene sheet of...
Density of states in 2 dimensions. Consider graphene, a 2 dimensional material which has a very unusual energy dispersion: E(k) -hkvF where VFis called the Fermi velocity and vF 10 m/s for all values of k. In k-space the dispersion looks like cone, called the Dirac cone, because the electrons behaves as relativist particles. The Fermi energy for intrinsic graphene is Ef-0, but can be electrostatically doped to Ef O - hkv; where Vris called the Fermi velocity and V...
Name Date Section Data Sheet Experiment 21: Ballistic Pendulum. A. The Ballistic Pendulum Mass ofball m-9.890. 0698 Mass of pendulum Mp- Trial h2 (m) hy (m) 4.1らコcm : 0.057 in 115.220. IS 3m-10.01am Average beight h Initial velocity of ballm's B. The Energy Lost in a Perfocily Inolastic Collsion O 00 698 01a nal velodic mis Initíal Kinétic Energy (J) Final Kinetic EnergyKinetic Energy Lost AB C. The Determination of the Velocity of the Ball by Projectile Motion Distance from...
calculate the circuit current,voltage across m,s ,the current through the 2ohm resistor,the circuit current when m,s are shorted,the circuit current when m,n are open circuited лзалт 5. 201 V S
When 147 V is applied across a wire that is 8.8 m long and has a 0.27 mm radius, the magnitude of the current density is 2.1 times 10^4 A/m^2. Find the resistivity of the wire. Number Units the tolerance is +/-2%
Would someone help me with A and B please 2) A voltage of 2 V is applied across the length of a 1 cm long Si bar doped with 1014 cm-3 of As with a cross sectional area of 0.02 cm2 and a temperature of 300 K. The bar is optically excited with a pulsed laser such that 102cm electron-hole pairs are generated per second uniformly in the sample when the laser is on. The electron recombination time is 2...
this is a problem of semiconductor device and fundamentals. Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
(Q2) For the shown beam, a uniformly distributed load is applied across the beam length. The beam cross section is symmetrical. The beam length and cross-sectional dimensions are shown in figure. 40 mm B С 300 mm 10 N/m N A 40 mm 300 mm 40 mm 500 mm 1- Plot the Shear Force Distribution (with values) 2- Plot the Bending Moment Distribution (with values) 3. Determine the maximum Moment value and indicate the most critical section 4- Calculate the...
2. A diode can be used as a white noise generator. Calculate the magnitude of shot noise if 100 V is applied to a diode in series with a 10 Ω resistor when measured with an instrument that has a 100 kHz bandwidth. a. If the shot noise signal above is taken across the resistor and amplified by 105 calculate the shot noise at the amplifier output b. 2. A diode can be used as a white noise generator. Calculate...
iii. Use the Ebers-Moll model to calculate the collector current of an npn BJT when/B-1 μΑ and a reverse bias of 10 V exists on the base-collector junction. Assume a 0.3, R 10-15 A Fo 3.14x10 A and V 100V. [4 pts.]
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using this and the 2D density of states given by where m is the carrier effective mass, deduce the degeneracy of a Landau Level Sketch these Landau levels on a graph of number n(E) verses energy (E), and indicate the position of the Fermi Energy for a filling factor of 8 4 (b) Sketch the band diagram for a heterojunction between p-type AlGaAs...