0.7V, and Va 100V. Find: -For the operational amplifier of Figure 4 assume all transistors have β-100, Find the de emitter currents and the de collector voltage of all transistors. The de voltage at the inputs is OV and the de output voltage is held at 0V (by negative feedback, not shown). Neglect the de base currents for this part. Find the (differential) voltage gain of the amplifier with R-10 k2. Assume the impedance of the capacitor is very large....
0.7V, and Va 100V. Find: -For the operational amplifier of Figure 4 assume all transistors have β-100, Find the de emitter currents and the de collector voltage of all transistors. The de voltage at the inputs is OV and the de output voltage is held at 0V (by negative feedback, not shown). Neglect the de base currents for this part. Find the (differential) voltage gain of the amplifier with R-10 k2. Assume the impedance of the capacitor is very large....
4.3V (15 pts) For the circuit shown, Rc = 2 kQ. Assume that VBE-0.7V, and that β very large, resulting in the emitter and collector currents being about equal. a) Determine the value of RE that would result in VcE 3V b) Determine the value of the collector current. c) Determine the value of β, if the base current IB-2μΑ. RE -5.7V
Problem 4. For the following common-emitter (CE) amplifier, assume Vr-25mV, v-0.7v, Voc-12V and β = 120. Neglecting rx and rat a) Design for a low cut-off frequency of 120Hz and determine the mid-band gain Vee b) Design for a high cut-off frequency of 300 KHz (Hint: Remember what we did in the lab?) Raig 70 Kn R Ci 20 Kn R 12 ΚΩ 30 K R Vsig
For all BJTs, assume: IVBE,on1-0.7V, β 100, and|VCE,sat-0.1V (use Vr 25mV) For all MOSFETs, assume: I'm|-1V and μ COX-20 V2. Q3: Consider the circuit shown to the right where W- 100. Resistor values are: RG 1M, RD 10kn, Rs 500, R 20k0, and Rs 100k. The capacitors should be assumed short- circuits at the operating frequency of the circuit and Vo -Vss = +3V. a) Calculate the bias point parameters (lo and Vos) for the Rai Ca Rsi transistor and...
HW#4 Given 4 versus Vas curve as below, where β-8mA/V2 . la = β(gs-v,)', draw v, versus las for below inverter circuit. v,-1V. Curve 70 60 50 30 20 10 OS1152 25S 4 45 vav oan
Assume T= 300K 2. (4 points) A silicon junction diode has v = 0.7V at I= 1 mA a) Find the voltage atI 5 mA b) Find the current į at voltage v 0.8V.
Assume the following transistors are biased so that they both have VGs 1.0 V, [VTH 0.7V. Find the value/range of gate/drain voltage by completing the following: VDD 5V D2 G1 D1 (a) NMOS case (b) PMOS case: (c) PMOS case: . In order for the transistor to be active, what is the requirement on VG2? . In order for the transistor to be active, what is the requirement on VDı? VGI. In order for Ml to be active, what is...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
please solve 5.38. 16 A, β= 100, and Also, assume the ca large. and 1O voltage gain. Assume la = 00. impedances of the circuits shown in Fig. 5.130. Assume V 5.38. Determine the voltage gain a Vcc Rc Vcc Vout Vino-ーにQ1 a2 RE Rc Rc RB Vout Q2 RB 01 01 VB Figure 5.130