Question

Question 1: 20% Given that a silicon PN junction diode (D1) has forward current of 1.5 mA at forward voltage of 0.7V, thermal voltage V-26mV at room temperature. Assuming diode forward and reverse characteristic is given by: Forward equation: izle , Reverse cquation: i=-1 (a) Find reverse saturation current Is parameter. (3%) i= Isere =1.5m = Is e 2026 Is = 3.04x107S A (f) A 0.? (a) Find diode current if forward voltage is 0.73V. (4%) Cal 0.73%.026 =4.75mA (6) Given a circuit with a diode D as shown below, you may use diode constant-voltage-drop (0.7V) model to calculate: (Hint: Finding Thevenin equivalent will be useful for circuit analysis.) b) diode current ! (4%) 15 V I= 7.5-0.7 bkn = 1.13 mA 10K (3%) B (ii) voltage at node A VA=It lkn = 1.13v * * le 10KO (iii) voltage at node B VB = VAT 0.7 - 1.83V (iv) Which of the following mechanism dominates the diode current (Circle the correct answer (3 ) Diffusion current Drift current o forward bias K reverse biased Page 2/8) Version Alpha

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Answer 1

SAL . Given Diode ell has iz 1.5mA at vp = 0.70. . We know vt Forward Voltage i Is e Thermal Voltage orward curant Saturation Current 1.5mA = 0.7 r 0.026 Is. 26.923 e 1.5 mA = Is I. x 4.426x 10" IS x 1-3 Is = 0.304 x 1/4 A. - 3x 18"A. Is = 3 fA CCM is Is e vi = 3x105 DOL = 3x10-15 x 1.56800'2 ī 4.68 mA. B loka Max 15 A {lia I Šloke

Theoxm. Apply Thevenins Open circur's voltas (Var) En lon >> Voc = 158 1 1/2 = 7.5v. The vean Resistana ARTW Reloka Rh= (1 1/10) = 5 kr Y The equivalent circuit is . Raha 5kr + 7.5 7. VOC (i) Voc - Vorode Diode Current 1. Ratika 7.5-0.7 145 23 mAmps (;) voltage at Az IX l kors = 1.333x IK ) ا = 1.133 V. VB-VA=0,7 ( Diode Voltase + VB= VA+ 0.7 - 1.83 V

in In Diode, Dominant cunnt alone cepends on biasing of diode Foward Bias - Drift Cursat (due to Input Voltage) Reverse Bias - Diffusion Current (due to difference in concentration of holes & elecbons)