10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....

Question

Question

10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning. 2

Add a comment Improve this question Transcribed image text

Answer 1

Answer #1

No, because Al is very good conductor, even by doping with Ge it acts as good conductor. but in reverse case means by doping

Add a comment

Answer 2

Similar Homework Help Questions

10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning.

10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning.
For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of...

For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of 1 x 10^19/cm3, calculate the built-in potential Vb at 300K, dark, thermal equilibrium condition. Please show the equations and parameters used in the calculation and the value of Ec-Ef, Ef-Ev, and Vb. Please draw a band structure similar to the one in lecture 5 slide 6 based on your results, please also label Ec, Ev, Vb, and Ef in the drawing.
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion...

1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion region is a region in the pn junction that is depleted from................. 3.Decreasing the amount of doping to an intrinsic semiconductor, causes the resistance of the doped silicon to................ 4.What is a p-type semiconductor? 5.As the amount of doping to an intrinsic semiconductor increases, the resistance of the doped silicon................

A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...

A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type...

2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type dopants, how do the chemical potentials change? Sketch the valence band and conduction band, along with them sketch also the Fermi-Dirac distribution
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type...

2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type dopants, how do the chemical potentials change? Sketch the valence band and conduction band, along with them sketch also the Fermi-Dirac distribution

If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-...

If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 52 microns. Assume p and n mobilities are 500 & 1 500 стл2/(V*s) respectively. If we have silicon at 300K with...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of...

Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of 2.5x10^16/cm3. Assume that all the silicon atoms displace only P atoms in the InP crystal. This is an example of “amphoteric” doping. (a) Explain amphoteric doping, and why it is important I specify which type of atoms in an InP crystal is replaced by the Si atoms that are used for doping. (b) In this situation, state if the doped InP is n-type or...
He 17 Al Si P S CIAr 12 35 Zn Ga Ge As Se Br Kr 53 51 116 115 113 112 GaN is known as a IlI-IV intrinsic semiconductor. Ga has 3 electrons in its outermost shell, and N has 5. Ga and N share electron...

He 17 Al Si P S CIAr 12 35 Zn Ga Ge As Se Br Kr 53 51 116 115 113 112 GaN is known as a IlI-IV intrinsic semiconductor. Ga has 3 electrons in its outermost shell, and N has 5. Ga and N share electrons so that each has 8 electrons, producing a completely full valence band What element could be a n-type dopant in GaN? You must also state which site (e.g. replacing Ga or N) the...

*Explanations should be brief. Draw a box around each final answer, if applicable.* 1. Consider intermolecular...

*Explanations should be brief. Draw a box around each final answer, if applicable.* 1. Consider intermolecular forces and kinetic energies with respect to a solid and a liquid. Explain why molecules in a liquid are free to move past each other, while molecules in a solid are held in fixed positions. 2. Use your knowledge of intermolecular forces to provide an explanation for why the boiling point of 2-hexanol is higher than the boiling point of 2,3-dimethyl-2-butanol. Be sure to...

10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....

Homework Answers

Add Answer to:
10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....

Post as a guest

Earn Coins

10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning.

For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of...

1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion...

A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...

2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type...

2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type...

If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-...

Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of...

He 17 Al Si P S CIAr 12 35 Zn Ga Ge As Se Br Kr 53 51 116 115 113 112 GaN is known as a IlI-IV intrinsic semiconductor. Ga has 3 electrons in its outermost shell, and N has 5. Ga and N share electron...

Explanations should be brief. Draw a box around each final answer, if applicable. 1. Consider intermolecular...

10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....

Homework Answers

Add Answer to: 10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....

Post as a guest

Earn Coins

Add Answer to:
10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....