Homework Answers
Add Answer to:
If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon...
QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)A2 area and doped with acceptors and donors at 6.27*10^15/cc, and forward bias of 0.63 V. Assume e-& e+ mobilities of 1500 & 500 cmn2/V*s), and minority carrier lifetimes of 1 microsecond. Vt:0.02585V, Answer should be to two significant digits with fixed point nctation.
QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode...
QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)M2 area and doped with acceptors at 6.9 1015/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cmA2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt-0.02585V, Answer should be to two significant digits with fixed point notation.
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion region is a region in the pn junction that is depleted from................. 3.Decreasing the amount of doping to an intrinsic semiconductor, causes the resistance of the doped silicon to................ 4.What is a p-type semiconductor? 5.As the amount of doping to an intrinsic semiconductor increases, the resistance of the doped silicon................
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)A2 area and doped with acceptors and donors at 6.27*10^15/cc, and forward bias of 0.63 V. Assume e-& e+ mobilities of 1500 & 500 cmn2/V*s), and minority carrier lifetimes of 1 microsecond. Vt:0.02585V, Answer should be to two significant digits with fixed point nctation.
QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)M2 area and doped with acceptors at 6.9 1015/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cmA2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt-0.02585V, Answer should be to two significant digits with fixed point notation.
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
Most questions answered within 3 hours.
-
A helium balloon with 2.5L of gas has a gauge pressure of 10,000
Pa. The balloon...
asked 2 minutes ago -
What is responsible for Jupiter's enormous magnetic field?
asked 17 minutes ago -
At the end of the year, a company offered to buy 5,000 units of
a product...
asked 18 minutes ago -
Implement C++ program for each of the following.
Let D = [-48, -14, -8, 0, 1,...
asked 38 minutes ago -
Consider a labor market in which LD = 400 – 4W and LS = 250 +...
asked 52 minutes ago -
Let’s say you are teaching a typically-developing young child
how to eat with a spoon. Describe...
asked 36 minutes ago -
Ask Your Teacher A toy gun uses a spring to project a 5.6-g soft
rubber sphere...
asked 48 minutes ago -
*****DO NOT ANSWER THIS QUESTION IF YOU DON'T
KNOW*******
Question - PERSONAL DEVELOPMENT ESSAY and Detailed...
asked 55 minutes ago -
A certain rifle bullet has a mass of 5.25 g. Calculate the de
Broglie wavelength of...
asked 1 hour ago -
Research new software products that assist in project
communication management. Write a paper summarizing your findings,...
asked 1 hour ago -
the figure below to the left shows a beaker completely filled
with water. then a block...
asked 1 hour ago -
what is the duistribution channels of HUL in india and how they
distribute?
how is this...
asked 1 hour ago