Homework Answers
When Ge is dopped with Al we get p type semi conductors
Reason :- Aluminium is a group 3 element that means it has 3 valance electrons in its outer shell. If aluminium replaces a group 6 germanium atom in a crystal there will be 1 less electron, this is called as a hole and behaves like a positive charge carrier
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10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning.
10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning....
10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning. 2
Problem 3: Semiconductor doping a) Explain why boron (B) is preferred over indium (In) as the...
Problem 3: Semiconductor doping a) Explain why boron (B) is preferred over indium (In) as the dopant species to achieve highly conductive p-type silicon. b) At very high temperatures (e.g. >1000°C), the conductivity of silicon is not significantly affected by moderate doping (Na or No less than 101/cm), i.e. it is an intrinsic semiconductor. Explain why this is the case.
For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of...
For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of 1 x 10^19/cm3, calculate the built-in potential Vb at 300K, dark, thermal equilibrium condition. Please show the equations and parameters used in the calculation and the value of Ec-Ef, Ef-Ev, and Vb. Please draw a band structure similar to the one in lecture 5 slide 6 based on your results, please also label Ec, Ev, Vb, and Ef in the drawing.
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion region is a region in the pn junction that is depleted from................. 3.Decreasing the amount of doping to an intrinsic semiconductor, causes the resistance of the doped silicon to................ 4.What is a p-type semiconductor? 5.As the amount of doping to an intrinsic semiconductor increases, the resistance of the doped silicon................
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type...
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type dopants, how do the chemical potentials change? Sketch the valence band and conduction band, along with them sketch also the Fermi-Dirac distribution
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type...
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type dopants, how do the chemical potentials change? Sketch the valence band and conduction band, along with them sketch also the Fermi-Dirac distribution
If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-...
If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 52 microns. Assume p and n mobilities are 500 & 1 500 стл2/(V*s) respectively.
If we have silicon at 300K with...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of 2.5x10^16/cm3. Assume that all the silicon atoms displace only P atoms in the InP crystal. This is an example of “amphoteric” doping. (a) Explain amphoteric doping, and why it is important I specify which type of atoms in an InP crystal is replaced by the Si atoms that are used for doping. (b) In this situation, state if the doped InP is n-type or...
He 17 Al Si P S CIAr 12 35 Zn Ga Ge As Se Br Kr 53 51 116 115 113 112 GaN is known as a IlI-IV intrinsic semiconductor. Ga has 3 electrons in its outermost shell, and N has 5. Ga and N share electron...
He 17 Al Si P S CIAr 12 35 Zn Ga Ge As Se Br Kr 53 51 116 115 113 112 GaN is known as a IlI-IV intrinsic semiconductor. Ga has 3 electrons in its outermost shell, and N has 5. Ga and N share electrons so that each has 8 electrons, producing a completely full valence band What element could be a n-type dopant in GaN? You must also state which site (e.g. replacing Ga or N) the...
10. Can Al be used to produce an n-type semiconductor by doping Ge? Explain your reasoning. 2
Problem 3: Semiconductor doping a) Explain why boron (B) is preferred over indium (In) as the dopant species to achieve highly conductive p-type silicon. b) At very high temperatures (e.g. >1000°C), the conductivity of silicon is not significantly affected by moderate doping (Na or No less than 101/cm), i.e. it is an intrinsic semiconductor. Explain why this is the case.
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type dopants, how do the chemical potentials change? Sketch the valence band and conduction band, along with them sketch also the Fermi-Dirac distribution
2. [10%) consider an intrinsic semiconductor. If you dope heavily a semiconductor with n-type or p-type dopants, how do the chemical potentials change? Sketch the valence band and conduction band, along with them sketch also the Fermi-Dirac distribution
If we have silicon at 300K with 10 microns of p-type doping of 5.38*10 17/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 52 microns. Assume p and n mobilities are 500 & 1 500 стл2/(V*s) respectively.
If we have silicon at 300K with...
He 17 Al Si P S CIAr 12 35 Zn Ga Ge As Se Br Kr 53 51 116 115 113 112 GaN is known as a IlI-IV intrinsic semiconductor. Ga has 3 electrons in its outermost shell, and N has 5. Ga and N share electrons so that each has 8 electrons, producing a completely full valence band What element could be a n-type dopant in GaN? You must also state which site (e.g. replacing Ga or N) the...
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