Please write clearly and do by hand, do not use Matlab
Homework Answers
Answer)
-> The I-V charecteristic of diode with temperature dependent is plotted
-> Supported equations and plot is attached here for better understanding.
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Please write clearly and do by hand, do not use Matlab
The temperature of a silicon...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
Write the MatLab code and solve by hand as well. Exercise: Consider the configuration of conductors...
Write the MatLab code and solve by hand as well.
Exercise: Consider the configuration of conductors and potentials shown in Figure 14.7. Write a MATLAB program that solves Laplace equation in the area bounded by the conductors. Plot the contours of the voltage and the lines of the electric field Gap Gap 50N Gap 50 V 2 c 2 cm 100 v 0 V o V 4 cm 0 V 4 cm Figure 14.7 The configuration of the exercise of...
run III please write the codes and do exactly what they asked runIV plot by HAND...
run III
please write the codes and do exactly what they asked
runIV
plot by HAND and use MATLAB also
-will get tumbs up
RUNWIN Use Matlab to solve the following non-linear equation: sin(w. ) - cos (w. ), for tan(w. ) sin(w. ) +12 for /2 RUNWIV I + + 2 Obtain plots by hand and by using Matlab of the following equation: (D) sin( +90°) vs. radians, degrees and time
Please use matlab, post the code, and dont just write the code by hand. Thank you!...
Please use matlab, post the code, and dont just write
the code by hand. Thank you!
4 [3 points] Use the function f(x on the interval [5, 5] and the 11 points below to find a N-10 Lagrange polynomial, using MATLAB. You will need to write code for and plot the polynomial as a function of x, but you do not have to write the polynomials down by hand 5 0 2 3 4 5 f(x) | 0.0399 | 00623...
Parts A,B, and C (All if possible). "Code" could just be the set of equations plugged...
Parts A,B, and C (All if possible). "Code" could just be the set
of equations plugged into a graphing program (such as Desmos).
For the following problems, assume: The cross-sectional area is 250 um x 250 um. The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us. 3. Consider a GaN p-n junction with NA = 1018 cm-3 and No = 1017 cm3. a. What is the reverse saturation...
Please write clearly or type for a and b Why do the electrons from an n-type...
Please write clearly or type for a and b
Why do the electrons from an n-type semiconductor not appear as minority carriers after they pass through the metal-semiconductor junction? How the stored charge amount in a Schottky barrier compares with that of a p-n junction in forward bias condition and mention the significance of the quantity in the operation of a Schottky barrier?
Can you write hand solutions and matlab code please? Q3) There is a square wave with...
Can you write hand solutions and matlab code please?
Q3) There is a square wave with the period of T=21. The amplitude is 3 between 0 and it The amplitude is 0 between 1 and 2 T. 2 3 4 5 a) Find the Fourier series coefficients of this square wave. a = x()ật Il x(t)cos(kt)dt bx = ( x(t)sin(kt)dt b) Using Matlab, plot the truncated Fourier series; (1) For k 0 to 10 (II) For k 0 to 1000...
Please do not copy the previous answer for this question. and please explain and write clearly....
Please do not copy the previous answer for this question. and
please explain and write clearly. Many thanks!
Please answer questions 1,2,3 for n=1,8=2,a=3,B=4,8=5 The component values in the circuit shown in Fig. I are: • • • • vs(t) = A sin (2 reft) mV, where A = (2000+ n) and f = (10+8) Hz Ri -(1000 + a)2 R2-(1000+B) 22 R, (1000+ €) 22 For example, if n = 8,8 = 5 and a=1, Vs(t) = 2.008 sin(...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
Write the MatLab code and solve by hand as well.
Exercise: Consider the configuration of conductors and potentials shown in Figure 14.7. Write a MATLAB program that solves Laplace equation in the area bounded by the conductors. Plot the contours of the voltage and the lines of the electric field Gap Gap 50N Gap 50 V 2 c 2 cm 100 v 0 V o V 4 cm 0 V 4 cm Figure 14.7 The configuration of the exercise of...
run III
please write the codes and do exactly what they asked
runIV
plot by HAND and use MATLAB also
-will get tumbs up
RUNWIN Use Matlab to solve the following non-linear equation: sin(w. ) - cos (w. ), for tan(w. ) sin(w. ) +12 for /2 RUNWIV I + + 2 Obtain plots by hand and by using Matlab of the following equation: (D) sin( +90°) vs. radians, degrees and time
Please use matlab, post the code, and dont just write
the code by hand. Thank you!
4 [3 points] Use the function f(x on the interval [5, 5] and the 11 points below to find a N-10 Lagrange polynomial, using MATLAB. You will need to write code for and plot the polynomial as a function of x, but you do not have to write the polynomials down by hand 5 0 2 3 4 5 f(x) | 0.0399 | 00623...
Parts A,B, and C (All if possible). "Code" could just be the set
of equations plugged into a graphing program (such as Desmos).
For the following problems, assume: The cross-sectional area is 250 um x 250 um. The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us. 3. Consider a GaN p-n junction with NA = 1018 cm-3 and No = 1017 cm3. a. What is the reverse saturation...
Please write clearly or type for a and b
Why do the electrons from an n-type semiconductor not appear as minority carriers after they pass through the metal-semiconductor junction? How the stored charge amount in a Schottky barrier compares with that of a p-n junction in forward bias condition and mention the significance of the quantity in the operation of a Schottky barrier?
Can you write hand solutions and matlab code please?
Q3) There is a square wave with the period of T=21. The amplitude is 3 between 0 and it The amplitude is 0 between 1 and 2 T. 2 3 4 5 a) Find the Fourier series coefficients of this square wave. a = x()ật Il x(t)cos(kt)dt bx = ( x(t)sin(kt)dt b) Using Matlab, plot the truncated Fourier series; (1) For k 0 to 10 (II) For k 0 to 1000...
Please do not copy the previous answer for this question. and
please explain and write clearly. Many thanks!
Please answer questions 1,2,3 for n=1,8=2,a=3,B=4,8=5 The component values in the circuit shown in Fig. I are: • • • • vs(t) = A sin (2 reft) mV, where A = (2000+ n) and f = (10+8) Hz Ri -(1000 + a)2 R2-(1000+B) 22 R, (1000+ €) 22 For example, if n = 8,8 = 5 and a=1, Vs(t) = 2.008 sin(...
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