1) Consider the following circuit with an assumption that we have the transistor in active mode....
Problem 5 Given the following circuit, assume the following parameters VBB IV, RB 220 k, RC = 2 k, VCC= 10 V, VBE(on)-0.7 V, and B 200 a) Calculate the base, collector, and emitter currents and the C-E voltage, also, calculate the transistor power dissipation b) What transistor configuration does the circuit resemble? Vcc=10V RC=2k Rg=220 kQ VCE VBB= 1V o + VRE IB
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
1. Draw a Voltage Divider biased transistor circuit. Sketch the Load Line if, Vcc 18V, Rc-1.2K(2, and RE-600Ω. 3. Find ic, VCE and mode of operation, if RBI-30.2 and RB2-10 ΚΩ, for β-150 4. Determine RB2, for Q to be on center of LL. Verify, Ic, VcE and mode of operation 5. Find mode of operation, Ic, and VcE, if: a. RBi is Short b. RBi is Open c. RB2 is Short. d. RB2 is Short Mode of operation 4...
5 نقاط For the circuit shown, If there is an added 1 K. Ohm resistor at the emitter terminal connected between Emitter and Ground, then calculate IB, IC, VCE, VB, and VC knowing that Vcc = 12 Volts, RB = 220 K. Ohm, RC = 4 K. Ohm, VBE = 0.7 volts, and Beta of transistor = 50 VCC Fig. 1 Rc im Ic RB ac HE output signal C2 IB + ac VCE input I signal G B +...
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Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
1. Consider the emitter-stabilized circuit shown below Vcc-15V RB 430kΩ Rc 1.6k2 IB β = 125 RE a) Find b, k, and VCE for the circuit as shown, with β = 125 b) Suppose that β can vary in the range from 100 to 150 due to manufacturing variations. What is the resulting range in Vce? c) What is the requirement on β such that the transistor will not saturate?