What is the required energy for photon absorption by quantum state 2 of a silicon quantum...
What is the required energy for photon absorption by quantum state 2 of a silicon quantum dot of size 2.1 nm
The band gap of Si is 1.12eV
The electron effective mass correction factor is 0.46
The hole effective mass correction factor is 0.56
Give your answer in eV to 3 decimal place.
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What is the required energy for photon absorption by quantum
state 2 of a silicon quantum...
Theory section is below for the equations PRELAB Read the theory section below. Calculate the photon...
Theory section is below for the equations
PRELAB Read the theory section below. Calculate the photon wavelength in nm corresponding to a photon energy equal to the theoretical band gap energy of S1.121 eV and GaAs, 1.422 eV. These will be used to set the monochromator. THEORY One of the most important characteristics of a semiconductor is its band gap energy Eg Whereas an electron in an isolated atom has discrete energy levels, an electron in a semiconductor crystal has...
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What is the allowed energy of the 1st energy state in a 1-D quantum box of...
What is the allowed energy of the 1st energy state in a 1-D quantum box of size 8.1nm Give your answer in eV to 3 decimal places.
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W...
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W-15 nm. (a) Due the quantum mechanical confinement in the quantum well, the lowest energy states of in the conduction band is no longer the conduction band edge, but the CB edge plus the confined state energy (particle in the box problem), where the confinement energy relative to the CB edge is given by the solutions for infinite barriers where n-1,2,.is the quantum number, n-1 is...
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Problem 2 An electron is confined to a quantum-well device whose potential is illustrated below. On either side of the central region -a < x < a, there is a potential step of 5 eV. The walls of the device at x = £b are very rigid. - V(2) 1 -b -a a b х Here a = 1 nm and b= 2 nm. An initially stationary helium atom with mass m = 6.6 x 107 -27 kg absorbs a...
Answers for questions 1-12 please The energy level diagram for a hydrogen atom is shown. The...
Answers for questions 1-12 please
The energy level diagram for a hydrogen atom is shown. The following 000 ev questions are about the energy levels of the hydrogen atom. An0544 ev -1.51 ev 0.850 ev electron jumps from the n 5 level to the n 1 level. 1. Will this result in an emission line, or an absorption line in then-3 n 4 spectrum of this atom? 2. Which excited state did the electron start at? n-2 3.40 ev 2....
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
Topic 7.1 – Discrete energy and radioactivity
The energy level diagram for a hydrogen atom is shown. The following questions are about the energylevels of the hydrogen atom. An electron jumps from the n = 5 level to the n = 1 level.1. Will this result in an emission line, or an absorption line in thespectrum of this atom? 1. _________________2. Which excited state did the electron start at?2. _________________3. What is the principal quantum number of the electron when it isat the level n = 1?...
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using ...
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using this and the 2D density of states given by where m is the carrier effective mass, deduce the degeneracy of a Landau Level Sketch these Landau levels on a graph of number n(E) verses energy (E), and indicate the position of the Fermi Energy for a filling factor of 8 4 (b) Sketch the band diagram for a heterojunction between p-type AlGaAs...
Theory section is below for the equations
PRELAB Read the theory section below. Calculate the photon wavelength in nm corresponding to a photon energy equal to the theoretical band gap energy of S1.121 eV and GaAs, 1.422 eV. These will be used to set the monochromator. THEORY One of the most important characteristics of a semiconductor is its band gap energy Eg Whereas an electron in an isolated atom has discrete energy levels, an electron in a semiconductor crystal has...
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W-15 nm. (a) Due the quantum mechanical confinement in the quantum well, the lowest energy states of in the conduction band is no longer the conduction band edge, but the CB edge plus the confined state energy (particle in the box problem), where the confinement energy relative to the CB edge is given by the solutions for infinite barriers where n-1,2,.is the quantum number, n-1 is...
Problem 2 An electron is confined to a quantum-well device whose potential is illustrated below. On either side of the central region -a < x < a, there is a potential step of 5 eV. The walls of the device at x = £b are very rigid. - V(2) 1 -b -a a b х Here a = 1 nm and b= 2 nm. An initially stationary helium atom with mass m = 6.6 x 107 -27 kg absorbs a...
Answers for questions 1-12 please
The energy level diagram for a hydrogen atom is shown. The following 000 ev questions are about the energy levels of the hydrogen atom. An0544 ev -1.51 ev 0.850 ev electron jumps from the n 5 level to the n 1 level. 1. Will this result in an emission line, or an absorption line in then-3 n 4 spectrum of this atom? 2. Which excited state did the electron start at? n-2 3.40 ev 2....
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
4. (a) The energy states of Landau levels are given by where wc is the cyclotron frequency Using this and the 2D density of states given by where m is the carrier effective mass, deduce the degeneracy of a Landau Level Sketch these Landau levels on a graph of number n(E) verses energy (E), and indicate the position of the Fermi Energy for a filling factor of 8 4 (b) Sketch the band diagram for a heterojunction between p-type AlGaAs...
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