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2 An n type has a resistivity of 0.5 0.cm and E 10 V/cm, the drift...
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 ...
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
Need help solving this questions. In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s,...
Need help solving this questions.
In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s, g.-12, s,-8.85% 10-14 Fern, and KT4-26-my 250 cma/V.s, Problem 1 A silicon sampl equilibrium has electron concentration given asn -e0'x+2305, where x is distance. Determine the (a) position of the Fermi level with respect to the conduction band, Ee, at x-1-um, (b) electron diffusion current density at x-1- m, and (c) sample conductivity at x-0 Problem 2 Consider a silicon PN-junction with acceptor and...
4. If a metallic wire of cross-sectional area 3.0x 10 m carries a current of 6 A and has a mobile charge density of 4.24 x ca * 10M carriers/m2 what is the average drift velocity of the mobile...
4. If a metallic wire of cross-sectional area 3.0x 10 m carries a current of 6 A and has a mobile charge density of 4.24 x ca * 10M carriers/m2 what is the average drift velocity of the mobile charge carriers? (charge value 1.6x 10 " coul) a. 3.4 x10 m/s b. 1.7 x 10' m/s c. 1.5x 10 m/s d. 2.9 x 10 m/s S. If a certain capacitor is charged to 10 V and then, at t -0,...
NA = 10cm No =0*7cm р n Figure 1. p-n diode. P ріп NA = 10'...
NA = 10cm No =0*7cm р n Figure 1. p-n diode. P ріп NA = 10' No - 10/ NA = 10' ' N) = 10' ' N:-? No = 10" -0.7 eV wc = ? Figure 2. n-p-n transistor. Pos? Donc = ? Figure 3. p-1l-p transistor. 1. Take one n-type Si wafer of your choice of doping for No. (6) Calculate the conductivity of this n-type Si wafer and calculate the resistivity of this n-type Si wafer (ii)...
2 0. The primary coil of a transformer has N, 4 50 x 10 turns, and...
2 0. The primary coil of a transformer has N, 4 50 x 10 turns, and its secondary has Ni 1.35 x 10 tuns. If the input voltage across the primary coil is av-(1so v) sin or, voltage is developed across the secondary coil? a. 332 v b. 454 V C. 382 V d. 726 e. None of the above A sinusoidal voltage Av (95 V) sin (100) is applied to a series Z-90 mH, C-11SpF, and R- 46 2...
5. Material with uniform resistivity is formed into a wedge as shown in Figure 27.19. Show...
5. Material with uniform resistivity is formed into a wedge as shown in Figure 27.19. Show that there sistance between face A and face of this wedges given by 6. In the circuit of Fig. 32-30, 1200 V, C-6,50 F, R.-R.-R.-7.30 x 10" n. With C completely unchanged the switch is suddenly closed t o la Determine the currents through each resistor for t=0 and 1 Draw qualitatively a graph of the potential drop V, across R. from O to...
Telps-Vos plot Tor an n-channel enhancement-mode MOSFETshown below. The substrate bias is 0 V. The saturation...
Telps-Vos plot Tor an n-channel enhancement-mode MOSFETshown below. The substrate bias is 0 V. The saturation current, Iosat, is 10 mA, and the saturation voltage, Vos,sat, is 5 V. For thig device, tox=10 nm, the olide permittivity εox = 3.5 x 10-13 —, W = 50 um. W in the channel width. He oxide capacitance per unit area is Cox = Ɛox/ tox. ID [mA] 1 4 8.0 G rup o Calculate inversion layer sheet charge density, Qi(y), corresponding Bias...
Qno 2 only
Test 2, ENS345, Spring 2019 1. A photoresistor is made of in-type silicon with resistivity of 10 Qcm and recombination lifetime of 30 ps. The photoresistor is illuminated with light so that the electron-hole pairs generation throughout its volume is resistivity of the photoresistor under illumination 2. In the photoresistor described above, find position of quasi-Fermi levels before illumination and during illumination. 3. In the resistor described above, estimate mean free time, mean free path and drift...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Need help solving this questions.
In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s, g.-12, s,-8.85% 10-14 Fern, and KT4-26-my 250 cma/V.s, Problem 1 A silicon sampl equilibrium has electron concentration given asn -e0'x+2305, where x is distance. Determine the (a) position of the Fermi level with respect to the conduction band, Ee, at x-1-um, (b) electron diffusion current density at x-1- m, and (c) sample conductivity at x-0 Problem 2 Consider a silicon PN-junction with acceptor and...
4. If a metallic wire of cross-sectional area 3.0x 10 m carries a current of 6 A and has a mobile charge density of 4.24 x ca * 10M carriers/m2 what is the average drift velocity of the mobile charge carriers? (charge value 1.6x 10 " coul) a. 3.4 x10 m/s b. 1.7 x 10' m/s c. 1.5x 10 m/s d. 2.9 x 10 m/s S. If a certain capacitor is charged to 10 V and then, at t -0,...
NA = 10cm No =0*7cm р n Figure 1. p-n diode. P ріп NA = 10' No - 10/ NA = 10' ' N) = 10' ' N:-? No = 10" -0.7 eV wc = ? Figure 2. n-p-n transistor. Pos? Donc = ? Figure 3. p-1l-p transistor. 1. Take one n-type Si wafer of your choice of doping for No. (6) Calculate the conductivity of this n-type Si wafer and calculate the resistivity of this n-type Si wafer (ii)...
2 0. The primary coil of a transformer has N, 4 50 x 10 turns, and its secondary has Ni 1.35 x 10 tuns. If the input voltage across the primary coil is av-(1so v) sin or, voltage is developed across the secondary coil? a. 332 v b. 454 V C. 382 V d. 726 e. None of the above A sinusoidal voltage Av (95 V) sin (100) is applied to a series Z-90 mH, C-11SpF, and R- 46 2...
5. Material with uniform resistivity is formed into a wedge as shown in Figure 27.19. Show that there sistance between face A and face of this wedges given by 6. In the circuit of Fig. 32-30, 1200 V, C-6,50 F, R.-R.-R.-7.30 x 10" n. With C completely unchanged the switch is suddenly closed t o la Determine the currents through each resistor for t=0 and 1 Draw qualitatively a graph of the potential drop V, across R. from O to...
Telps-Vos plot Tor an n-channel enhancement-mode MOSFETshown below. The substrate bias is 0 V. The saturation current, Iosat, is 10 mA, and the saturation voltage, Vos,sat, is 5 V. For thig device, tox=10 nm, the olide permittivity εox = 3.5 x 10-13 —, W = 50 um. W in the channel width. He oxide capacitance per unit area is Cox = Ɛox/ tox. ID [mA] 1 4 8.0 G rup o Calculate inversion layer sheet charge density, Qi(y), corresponding Bias...
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