We need at least 10 more requests to produce the answer.
0 / 10 have requested this problem solution
The more requests, the faster the answer.
2) Consider a PN junction diode (a device used to make thermometers). The bandgap of the...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...