Consider an PMOS FET having Kp- 0.3mA/V2, VTp -2V and A-0.01V1 Find out the regions of...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
help me please subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
In the following PMOS transistor, assume that , and . Find the current and state whether it is in the saturated, triode, or cut-off region for the values of and . Assume that if it is in the saturation region, and if it is in the triode region. VTH = -0.51 β = 800μ A/V 0 Ip Rp 60kΩ Rp 120kΩ ID (VGS VTH) 2 Ip = B((VGS – VTHVps DS 10V / 90k) W Ro WHE -10V
Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN = 1V, VTP = -1V. It is also given that VDD1 = 10V, VDD2 = 8V. Remember that for saturation the drain current is given by ID = ½ kn'(W/L) (VGS – VTN)2 for NMOS and ID = ½ kp'(W/L) (VGS – VTP)2 for PMOS. You can ignore the channel modulation for all transistors. Find the value of R so that...
Please help, and explain as much as possible. Thank you! 2. Consider an N-channel MOSFET circuit where the gate and drain terminals are shorted to- gether2 as shown in Figre 2. Assume that the MOSFET has trans-conductance parameter of gm = 0.5mA/V and the threshold voltage of 0.7V (a) Identify in which region the n-channel MOSFET is operating (Triode region or Saturation region)? (b) Write MATLAB code to compute the drain current for the following gate-to-source voltage, Vcs Ves-VDs 0,1,2,3,4,5,6,7...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
the Ebers-Moll VT = kB T/e. (c) Use your result from part (b) to find the resistance Rg necessary to generate 7.5μΑ of current with 20μΑ of programming current. (programming 6. FET I-V Curves. [10 pts.] Consider the family of I- V curves for a field effect transistor (FET) shown below. (a) Are the curves shown for a JFET or or an en- hancement mode MOSFET? Explain briefly how you know. (b) Table values for the given gain-source volt- ages...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...