, and n-type silicon with doping concentration of Find the: 1. vaule of the conductivity 2....
,
and n-type silicon with doping concentration of 
Find the:
1. vaule of the conductivity
2. mobility,
3. conductance
4. sheet resistance
5. total mobile charge
6. mobile charge per unit area
7. field intensity
8. drift velocity
9. transit time
10. current.
Homework Answers
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,
and n-type silicon with doping concentration of
Find the:
1. vaule of the conductivity
2....
The compensated n-type silicon at 300 K has a conductivity: 16 (ohm-cm)-1 and an acceptor doping...
The compensated n-type silicon at 300 K has a conductivity: 16 (ohm-cm)-1 and an acceptor doping concentration: 1017 cm-3. a) Express the mobility as a function of the doping concentration. b) Calculate the mobility and conductivity when Nd=2 1017 cm-3.
1-8 pts) An n-type piece of silicon with a length of 1.0 Jim and a cross-sectional...
1-8 pts) An n-type piece of silicon with a length of 1.0 Jim and a cross-sectional area of 0.05 um x 0.05 um sustains a voltage difference of 2.0 Volts between the two ends of the sample. The doping level is 107 cm Assume room temperature i.e. T = 300 K and that the electron mobility is 760 cm / V.sec a) What is the conductivity, o, of the material in ? 12. um b) What is the resistance of...
Qno2 only lal Tario Test 2, ENS345, Spring 2019 r is made of n-type silicon with conductivity of 3 Scm2 and recombination 1. A photoconducto e of 50 us. When illuminated with light, the conductivity...
Qno2 only
lal Tario Test 2, ENS345, Spring 2019 r is made of n-type silicon with conductivity of 3 Scm2 and recombination 1. A photoconducto e of 50 us. When illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. 2. For the photoconductor described above, find enerey difference between quasi-Fermi levels before illumination and during illumination 3. For the photoconductor described above, estimate mean free time, mean fr magnitude...
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility...
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration no-3 X 1014 cm and operating frequency f= 12 GHz.
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration...
question 3 1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and...
question 3
1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and recombination lifetime of 50 μs, when illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. r the photoconductor described above, find energy difference between quasi-Fermi levels before illumination and during illumination. 2. Fo 3. For the photoconductor described above, estimate mean free time, mean free path and the magnitude of the applied electric...
For n-type silicon at room temperature, with a donor doping concentration of 10^(17) cm^(-3), approximately how...
For n-type silicon at room temperature, with a donor doping concentration of 10^(17) cm^(-3), approximately how much larger will be the electron concentration, compared to the hole concentration? Assuming ni=10^(10) cm^(-3).
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion region is a region in the pn junction that is depleted from................. 3.Decreasing the amount of doping to an intrinsic semiconductor, causes the resistance of the doped silicon to................ 4.What is a p-type semiconductor? 5.As the amount of doping to an intrinsic semiconductor increases, the resistance of the doped silicon................
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measur...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
1-8 pts) An n-type piece of silicon with a length of 1.0 Jim and a cross-sectional area of 0.05 um x 0.05 um sustains a voltage difference of 2.0 Volts between the two ends of the sample. The doping level is 107 cm Assume room temperature i.e. T = 300 K and that the electron mobility is 760 cm / V.sec a) What is the conductivity, o, of the material in ? 12. um b) What is the resistance of...
Qno2 only
lal Tario Test 2, ENS345, Spring 2019 r is made of n-type silicon with conductivity of 3 Scm2 and recombination 1. A photoconducto e of 50 us. When illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. 2. For the photoconductor described above, find enerey difference between quasi-Fermi levels before illumination and during illumination 3. For the photoconductor described above, estimate mean free time, mean fr magnitude...
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration no-3 X 1014 cm and operating frequency f= 12 GHz.
7. For a typical n-type GaAs Gunn diode, estimate Electron drift velocity and negative electron mobility for the following parameters: threshold field Ea-2800 V/cm, Applied field E= 3000 V/cm, Device length L=1 um, Doping concentration...
question 3
1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and recombination lifetime of 50 μs, when illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. r the photoconductor described above, find energy difference between quasi-Fermi levels before illumination and during illumination. 2. Fo 3. For the photoconductor described above, estimate mean free time, mean free path and the magnitude of the applied electric...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
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