QUESTION 2 Determine whether the transistor n figure 2 is saturated RC 1 5kn RB BDC...
(1 point) RB IC VB VCC Determine the collector current of the transistor in the figure above. Vcc 2V, VB - 1.7V, and RB - 50K2 1-2 × 10-17A and β-100 nA
> A Moving to another question will save this response. uèstion 27 [2 Marks] Using Bdc=100, then the voltage VCE is equal to Rc 10 k2 RB Vc 20 V 1.0 MQ VBB 10 V 10.7 V 0.2 V 19 V 9.3 V
1) Consider the following circuit with an assumption that we have the transistor in active mode. The type of circuit below is a transistor commonn-emitter circuit. You must firstly determine i) Is then secondly ii) I and finally ii) Vce. All working must be shown. Rc 1.06.12 RB w @ Bpc = 50 + Vcc 10 V + 10 ΚΩ VBB 3 V
ECT2601/101/3/2019 TRANSISTOR BIAS CIRCUITS Question 2 Find lo. Vcn qnd V for the pnp transistor in figure 2 using the Thevenins Theorem applied o voltage divider Bias. (12) [12) VCC 12V IC Rc 3kQ R1 vc 04 2N5684G BDC 150 VB RE R2 30k0 1
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
Given RB = 240 k., Rc = 1.2 k., and = 120. Determine: a) IB b) Ic c) le d) VBE e) VCE f) Mode of operation (cutoff, active, saturation) Given RB = 47 kO2, Rc = 1.2 k2 and B = 120. Determine: g) Mode of operation (cutoff, active, saturation) O 8V For the circuit shown in Question #2, Vcc = 16 V, RB = 620 kl, Rc = 2 kN and B = 120. a) Determine le b)...
4. VBB= 10 V RB 200 k Vcc 20 V Rc 1k Using the second approximation of a transistor, solve for Bn 100 Icat) mA VCE(cut) V HA Ic = mA Ig = mA VE= V VB = V Vc = V VCE = V Pp= mW Draw load line Draw Q point Tle 20 15 10 5 Vce 25 20 15 10 5 For Bmax 300 For Bmin 30 mA mA VCE= _V VCE= V Oh Transistors Me se...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
ENGR 4803 Mechatronics exam review question
2. (25 pts.) For the transistor shown below, let B = 25. Determine V, such that the transistor is on the active region with Vce= 3 V. Vcc=6 V 3 Rc=1 k12 Ri=15 k12 View VCE R2=100 kn = -6v
ENG 301 Electronics I Homework 2 1 Refer to Figure 1. Assume ß 50 and VBE(on) 0.7 V for all BJTs in the circuit. For Ri 12 kN and Rc 10 k2, find the differential voltage gain (Ad) of the differential amplifier taken as one- sided output at vc +10 V Rc +10 V IREPR -10 V Figure 1 2. Vcc +12 V RCI= 10 k2 R3= 15 k2 67.3 k2 Ris Cci Q1 Cc2 CC3 R4= 45 k2 R2...