1.30P)a) Plot the channel formation of p-channel MOS-FET for linear and saturation pinch-off regime (Kitabı referans...
1.24P)a) Plot the structure of p-channel MOS-FET (Show semiconductor structure, gate, drain, source and voltage polarities) and summarize the working principle. b) Explain what happens if you change drain source voltage polarity. c) Plot the band diagram, approximate distributions of charge, electric field, and electrostatic potential in the ideal MOS capacitor in inversion for the p-channel case.
1.24P)a) Plot the structure of p-channel MOS-FET (Show semiconductor structure, gate, drain, source and voltage polarities) and summarize the working principle. b) Explain what happens if you change drain source voltage polarity. c) Plot the band diagram, approximate distributions of charge, electric field, and electrostatic potential in the ideal MOS capacitor in inversion for the p-channel case.
(3 pts) 8. Consider an n-channel MOSFET, which is essentially a MOS capacitor with two p-n junctions placed immediately adjacent to the region of the semiconductor controlled by the MOS gate. What must be the biasing mode of the MOS structure and polarity of the gate voltage for there to be a measurable current? a. Enhancement, positive b. Inversion, negative c. Inversion, positive d. Depletion, negative
Q1 Which of the following is true for a MOS capacitor with a P-type body? Select one: a. The charge in the inversion layer stays approximately constant as the gate voltage is increased above the threshold voltage b. The charge in the depletion region is proportional to the square root of the depletion region width, assuming that the body is uniformly doped c. In inversion, the total charge is equal to the sum of the charge in the depletion region...