Question

d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft mode junction is forward biased and emitter-collector junction is forward biased junction is reversed biased and emitter-collector junction is reversed biased junction is reversed biased and emitter-collector junction is forward biased is c) The base-emitter ) The to operate in active mode Collector-Base junction must be 7 For the BJT a) Heavily doped b) Must reversed bias c) Must be forward bias d) Lightly doped correct relation between the transistor parameters α and β are related by l-α c) a its

Answer 1

Transistor It consists of two p-n junctions back-to-back and is obtained by sandwiching either p-type or n-type semiconductor between a pair of opposite type of semiconductors. There are two types of transistors. (a) p-n-p transistor: Here two blocks of p-type termed as emitter and collector are separated by a thin block of n-type semi-conductor (termed as base) (b) n-p-n transistor: Here two blocks of n-type (termed as emitter and collector) are separated by a thin block of p-type semi conductor (termed as base) Emitter: left hand block of transistor. It is of moderate size and heavily doped. This supplies large number of majority carriers for the current. Base: This is the central block. It is very thin and lightly doped. collector: This collects major position of majority carriers supplied by the emitter. It is moderately dope and larger in size as compared to the emitter \r\n In cutoff, transistor works as controlled off switch
Ie=emitter current

IB = base current

Ic =collector current.

alpha=current gain of transistor

beta=forward current transfer ratio