Problem 2) A pn junction diode has parameters IS = 1011 A, VT =
25 mV, and = 1. Find the diode
voltage for the following values of diode current: 1 A, 10 A, 100
A, 1 mA, 10 mA, and 1 A.
Plot these values on a semilog graph where the vertical axis is
logarithmic in iD and the horizontal
axis is linear in vD. Note: A pn junction diode obeys the
equation:
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Problem 2) A pn junction diode has parameters IS = 1011 A, VT =
25 mV,...
Consider a Shockley diode with the following parameters: lo = 10-15 A, VT = 25 mV,...
Consider a Shockley diode with the following parameters: lo = 10-15 A, VT = 25 mV, DC bias voltage = 0.75 V A sinusoidal input with peak voltage 0.15 volts is superimposed to the diode. Determine the average power dissipated in the diode (in milliWatt), assuming small-signal conditions for your analysis. Round up your answer to 1 decimal place.
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A pl...
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The parameters of a pn junction diode at 300K are listed in the following table, the...
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A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
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1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properti...
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Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
Consider a Shockley diode with the following parameters: lo = 10-15 A, VT = 25 mV, DC bias voltage = 0.75 V A sinusoidal input with peak voltage 0.15 volts is superimposed to the diode. Determine the average power dissipated in the diode (in milliWatt), assuming small-signal conditions for your analysis. Round up your answer to 1 decimal place.
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
Problem 2 The diode in the circuit below has a saturation current Is = 10-13 A and n=1. Its ID-VD curve is illustrated below for your convenience. a) Using the graphical method, determine the value of R that would result in a diode current Ip 4mA. What is the resulting voltage Vp? b) With R as calculated above, a sinusoidal signal v, 100 sin(ot) mV is superimposed on the DC source. Draw the small signal model and find the output...
Problem 5. (10 pts) A diode has an area of 104 cm’ and the following properties p-side n-side NA = 5 x 107 cm Np = 1015 cm To = 100 ns Tp = 1 us Ho = 700 cm /V-s Hp = 400 cm/V-s (a) (6) What are the values of the electron and hole diffusion constants, D, and Dp, respectively in the p and n-sides of the junction? (2 pts) What are the values of the electron diffusion...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
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