Question 11
In Figure 1 and 2 the current gain is B = 120. For each figure determine the collector current (Ic), and the collector emitter voltage (Vce).
If the circuit is in saturation make Vce = 0.2V. If the base-emitter junction is foward biased then Vb = 0.7V.
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Question 11
In Figure 1 and 2 the current gain is B = 120. For each...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be=...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of...
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
-Summer 12018 10V 47 kQ 200 34) 34) Refer to the figure above. The minimum value...
-Summer 12018 10V 47 kQ 200 34) 34) Refer to the figure above. The minimum value of Ig that will produce saturation is A)1.064 HA D) 0.25 mA. B) 5.325 HA C)10.64 pA equals 35) 35) A transistor has a Poc of 250 and a base current, 1p, of 20 uA. The collector current, Ic D) 5 A. A) 5 mA. B) 50 mA. C) 500 uA 36) regions of operation 36) A bipolar junction transistor has B) 2 D)...
please choose one of the answer choices above. Must show all work, thank you Question 2...
please choose one of the answer choices above.
Must show all work, thank you
Question 2 CIRCUIT A2 (2.5 Marks) + Ver Rc Ic с IR Fig. 2: CIRCUIT A.2 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.2 (denoting the type Circuit A2). Assume the following: Vcc= 24 volt; Rc = 5.0 k; RB = 1500 k and B = 125. Required...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror sh...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Question #3 (14 points) Assume: B = 100 when active VBE = 0.7V when the base-emitter...
Question #3 (14 points) Assume: B = 100 when active VBE = 0.7V when the base-emitter junction is forward-biased. VCE (SAT) = 0.2V (8 points) a) Compute the value for RE to establish a DC emitter current of 0.5mA. Assume the BJT is operating in the active region. (6 points) b) Compute the range of RC values that would ensure the BJT is operating in the active region.
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
-Summer 12018 10V 47 kQ 200 34) 34) Refer to the figure above. The minimum value of Ig that will produce saturation is A)1.064 HA D) 0.25 mA. B) 5.325 HA C)10.64 pA equals 35) 35) A transistor has a Poc of 250 and a base current, 1p, of 20 uA. The collector current, Ic D) 5 A. A) 5 mA. B) 50 mA. C) 500 uA 36) regions of operation 36) A bipolar junction transistor has B) 2 D)...
please choose one of the answer choices above.
Must show all work, thank you
Question 2 CIRCUIT A2 (2.5 Marks) + Ver Rc Ic с IR Fig. 2: CIRCUIT A.2 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.2 (denoting the type Circuit A2). Assume the following: Vcc= 24 volt; Rc = 5.0 k; RB = 1500 k and B = 125. Required...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Question #3 (14 points) Assume: B = 100 when active VBE = 0.7V when the base-emitter junction is forward-biased. VCE (SAT) = 0.2V (8 points) a) Compute the value for RE to establish a DC emitter current of 0.5mA. Assume the BJT is operating in the active region. (6 points) b) Compute the range of RC values that would ensure the BJT is operating in the active region.
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