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1. (a) Sketch the band-diagram along the arrowed line of the device shown (below along the...
Draw the band diagram (the relative positions of conduction band edge EC, valence band edge Ev,...
Draw the band diagram (the relative positions of conduction band
edge EC, valence band edge Ev, Fermi level EF) for the four
following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV.
Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV,
ni=1.5×1016 m−3, kT=0.026 eV.
(Q1.1) p-type, NA=5×1023 m−3.
(Q1.2) p-type, NA=5×1021 m−3.
(Q1.3) n-type, ND=5×1023 m−3.
(Q1.4) n-type, ND=5×1021 m−3.
Q2 Draw the band diagram (the relative positions of conduction band edge...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in GaAs is 1E16/cm3, and Nc=5E17/cm3. i) Draw the thermal equilibrium energy band diagram for the structure ii) Calculate the barrier height and the built-in voltage iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND)) iv) Calculate the depletion capacitance for 1 cm2 area v)...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a p-type semiconductor which is heavily doped, i.e., more heavily doped than p). You should indicate Ec (conduction band), Ev (valence band), Ei (intrinsic Fermi level), and Ef (Fermi level) throughout the device structure. show your work (i.e., you should start from the diagram of individual material pieces). State any reason for your drawing.
) With the aid of a diagram, explair the formation of the depletion region in a...
) With the aid of a diagram, explair the formation of the depletion region in a P-n junction diode in thermal equilibrium. State the equilibrium condition for the currents flowing across the junction. Draw the band diagram of a forward biased p-n junction diode. On the diagram sketch the variation of the conduction band edge energy Ec and the valence band edge energy Ey. Sketch the variation of the electric field and potential across the p-n junction. State the changes...
3.16 Heterostructure Consider a Type I heterostructure as shown in Figure 3.27. (a) If Egl
Optoelectronics and Photonics 2nd edition. Chapter
3.16
3.16 Heterostructure Consider a Type I heterostructure as shown in Figure 3.27. (a) If Egl
9. An n- type germanium semiconductor sample is brought into contact with a p - type...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
1. (a) With the aid of an annotated sketch describe the growth technique known as Molecular Beam Epitaxy (MBE). Briefly describe how this growth technique has been used to grow Strans ki-Krastano...
1. (a) With the aid of an annotated sketch describe the growth technique known as Molecular Beam Epitaxy (MBE). Briefly describe how this growth technique has been used to grow Strans ki-Krastanov quantum dot nanostructures Metal Organic Chemical Vapor Deposition (MOCVD) is an alternative technique for growing epitaxial material. What is the principal advantage of MOCVD over MBE? (b) Figure 1 below shows a shutter sequence for a Il-V MBE reactor, where 1 denotes an open shutter, and 0 denotes...
(15 pts) 14. The energy band diagram for an ideal MOS-C under a specific gate bias is shown below...
Please do d e and f
(15 pts) 14. The energy band diagram for an ideal MOS-C under a specific gate bias is shown below. The device is maintained at T 300 K, kTiq 0.026 V, n, 1010 cm Note that E EF at the surface of the semiconductor. Answer the following questions. (d) Determine the surface potential s. (3 pts) EFM 0.24eVEc (e) Determine Dr. (3 pts) E, 0437 ev Ev 0 (a) What biasing mode is this MOS-C...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
Draw the band diagram (the relative positions of conduction band
edge EC, valence band edge Ev, Fermi level EF) for the four
following cases. Clearly note EC −EF, EF −EV, Ei −EF, EG = EC −EV.
Ei is the intrinsic Fermi level. Take NC=NV =1025 m−3, EG=1.1 eV,
ni=1.5×1016 m−3, kT=0.026 eV.
(Q1.1) p-type, NA=5×1023 m−3.
(Q1.2) p-type, NA=5×1021 m−3.
(Q1.3) n-type, ND=5×1023 m−3.
(Q1.4) n-type, ND=5×1021 m−3.
Q2 Draw the band diagram (the relative positions of conduction band edge...
) With the aid of a diagram, explair the formation of the depletion region in a P-n junction diode in thermal equilibrium. State the equilibrium condition for the currents flowing across the junction. Draw the band diagram of a forward biased p-n junction diode. On the diagram sketch the variation of the conduction band edge energy Ec and the valence band edge energy Ey. Sketch the variation of the electric field and potential across the p-n junction. State the changes...
Optoelectronics and Photonics 2nd edition. Chapter
3.16
3.16 Heterostructure Consider a Type I heterostructure as shown in Figure 3.27. (a) If Egl
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
1. (a) With the aid of an annotated sketch describe the growth technique known as Molecular Beam Epitaxy (MBE). Briefly describe how this growth technique has been used to grow Strans ki-Krastanov quantum dot nanostructures Metal Organic Chemical Vapor Deposition (MOCVD) is an alternative technique for growing epitaxial material. What is the principal advantage of MOCVD over MBE? (b) Figure 1 below shows a shutter sequence for a Il-V MBE reactor, where 1 denotes an open shutter, and 0 denotes...
Please do d e and f
(15 pts) 14. The energy band diagram for an ideal MOS-C under a specific gate bias is shown below. The device is maintained at T 300 K, kTiq 0.026 V, n, 1010 cm Note that E EF at the surface of the semiconductor. Answer the following questions. (d) Determine the surface potential s. (3 pts) EFM 0.24eVEc (e) Determine Dr. (3 pts) E, 0437 ev Ev 0 (a) What biasing mode is this MOS-C...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
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