(TCO 2) Which is true for the BJT?
Group of answer choices
a. Emitter current equals Collector current
b. Drain current equals Source current, and Gate current is zero
c. Emitter current equals to Base 1 current plus Base 2 current
d. Gate current plus Emitter current is equal to Drain current
e. Emitter current equals Collector current plus Base current
(TCO 2) Which is true for the BJT? Group of answer choices a. Emitter current equals...
(TCO 5) Which of the following is true? Group of answer choices Current yield = dividends / price paid. Coupon rate = interest / price paid. YTM = interest / 30. None of the above (TCO 8) Who would not normally be concerned about creating an investment policy for portfolio creation? CEO of a firm issuing bonds 401k plan manager Pension fund manager None of the above (TCO 4) Which of the following would be a good indicator of the...
Flag Which of the following is true for a PNP BJT operating in the forward-active region? Select one: O a. None of these b. The collector current consists primarily of holes injected from the collector into the O base O c. The base current consists primarily of holes injected from the emitter into the base O d. Some base current flows to replace holes which are lost as electrons diffusing across the base recombine O e. The emitter current consists...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
The transfer characteristic curve plotted below is representing a n-channel E-MOSFET. Vos VGS(th) O True False Which among the following transistors is the most suited for high-speed and high-frequency applications? a. MOSFET b. BJT C. IGBT d. JFET For a device, the characteristic of the I-V curve is exhibited as below. - -VGS - a. BJT b. E-MOSFET c. D-MOSFET d. JFET In a JFET or MOSFET, the parameter of loss is denoting - a. drain to source current with...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
2. a) Suppose the input to the following BJT switching cri is perd and duty cycle, D, varies between 0.2 and 0.5. Also, assume that the circuit is operating rectangeil i tngiw in steady state snl The switch needs to be designed such that the BJT is driven to saturation in the worst case scenario. First alent circuit model when the switch is closed and determine the maximum collector ( max. Then use the information provided in the following Table...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
Given the multistage amplifier below, select all correct statements Multistage-Amp Group of answer choices The collector current in Q2 is approximately 16mA The input impedance of the amplifier is approximately 2.5Megohms The output impedance of the amplifier (assuming Q2) has a Beta=100 is close to 500Kohms The overall gain for the circuit (including loading effects) is approximately 13 If an overall gain for the multistage amplifier of 20 is desired, RG can be selected around 450 to account for any...
1) Plot base current of a npn transistor versus base-emitter voltage 2) Plot Gate current of a MOSFET transistor versus gate-source voltage
2. True or false: a. Schottky barrier diodes typically have lower leakage current than p-n junction diodes b. The semiconductor drift current is proportional to the magnitude of the electric field. c. The ideal subthreshold slope for a MOSFET increases with increasing temperature d. For a MOSFET the density of inversion-layer charge is QinrsonCx VGS VFB e. For a MOSFET the following equation is correct: on inversion -Raccumulation VGS-VFB f. For a BJT the following equation is correct: -- 1-a...