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Consider silicon at a temperature of 300 K], and a donor concentration Np = 4-1015 [cm31....
Consider silicon at a temperature of 300 [K], and a donor concentration ND = 4·1015 [cm-3]
Consider silicon at a temperature of 300 [K], and a donor concentration ND = 4·1015 [cm-3]. The thermal equilibrium recombination rate is RP0=1·1011 [cm-3 s-1 ]. A uniform generation rate by illumination produces an excess-carrier concentration of on δn= δp=1·1014 [cm-3 ]. Note that at a temperature of 300 [K], the commonly accepted value for the intrinsic carrier concentration of silicon is ni = 1.5·1010 [cm-3] A) By what factor does the total recombination rate RP increase under illumination with respect to thermal equilibrium, RP/RP0 ?
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration o...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration of 1015 cm-3. Light is shined (uniformly) upon the sample generating 5*1019 electron-hole pairs.cm-3s-1 with a minority carrier lifetime of 10-6 s. What is the net electron-hole recombination rate? I think at steady state, the electron-hole recombination rate is the same as the generation rate. But the current circumstances of the question make me doubt that assumption or conclusion (the question is 4 marks).
1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is...
1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is the number of intrinsic carriers (ni) in silicon if its temperature is elevated to 600'K2 (10 points) b) To achieve an N-type doping level of 10 cm3 using phosphorous how many grams of pure phosphorous has to be added to every kilogram of pure silicon? (density of silicon is 2328kg/m, and its atomic mass is 28, atomie mass of phosphorous is 31)/(15 points) c)...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
Acceptor impurity of concentration 1014 cm–3 is added to a pure silicon sample. Which of the...
Acceptor impurity of concentration 1014 cm–3 is added to a pure silicon sample. Which of the following correctly shows the hole concentration (in cm–3) at thermal equilibrium, at 500 K? Assume ?i = 1.45 x 1010 cm–3 at 300 K and neglect the temperature dependence of the band gap.
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
2. Consider silicon at thermal equilibrium at T 600K. Assume the effective mass at 600K is...
2. Consider silicon at thermal equilibrium at T 600K. Assume the effective mass at 600K is approximately the same as that at 300K. The temperature dependence of the bandgap of Si follows the Varshni's Law: where E, (T 0K) 1.166eV, a 4.73 x 104eV/K, and B-636K. (a) Determine Nc, N, and ni. (b) Determine the position of the Fermi level if the silicon is intrinsic. (c) Determine the position of the Fermi level if the hole concentration is p- 1017/cm3
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is the number of intrinsic carriers (ni) in silicon if its temperature is elevated to 600'K2 (10 points) b) To achieve an N-type doping level of 10 cm3 using phosphorous how many grams of pure phosphorous has to be added to every kilogram of pure silicon? (density of silicon is 2328kg/m, and its atomic mass is 28, atomie mass of phosphorous is 31)/(15 points) c)...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
2. Consider silicon at thermal equilibrium at T 600K. Assume the effective mass at 600K is approximately the same as that at 300K. The temperature dependence of the bandgap of Si follows the Varshni's Law: where E, (T 0K) 1.166eV, a 4.73 x 104eV/K, and B-636K. (a) Determine Nc, N, and ni. (b) Determine the position of the Fermi level if the silicon is intrinsic. (c) Determine the position of the Fermi level if the hole concentration is p- 1017/cm3
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
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