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1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is...
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi ene...
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
Please clearly answer the following question showing all work, each step, and the reasoning thereof. 16.1-7...
Please clearly answer the following question showing all work,
each step, and the reasoning thereof.
16.1-7 Fermi Level of an Intrinsic Semiconductor. Given the expressions (16.1-12) and (161 13) for the thermal equilibrium carrier concentrations in the conduction and valence bands: (a) Determine an expression for the Fermi level E of an intrinsic semiconductor and show that it falls exactly in the middle of the bandgap only when the effective mass of the electrons me is precisely equal to the...
Please help me 1. In degenerate p-type silicon, a. The Fermi energy is above the valence...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
1. (a) One kilogram of intrinsic silicon is to be doped to make n-type extrinsic silicon....
1. (a) One kilogram of intrinsic silicon is to be doped to make n-type extrinsic silicon. In order to get Np = 1018/cm how many grams of phosphorous is needed? (10 points)
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Question 8 Pure silicon at room temperature has an electron number density of about 5 ×...
Question 8 Pure silicon at room temperature has an electron number density of about 5 × 1015 m3 and an equal density of holes In the valence band. Suppose that one of every 10° silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
(2) In a semiconductor with an energy gap Eg between the valence and the conduction bands we can take Ef (the Fermi energy) to be halfway between the bands (see figure below): Conduction band Energy gap Eg Valence band Semiconductor a. Show that for a typical semiconductor or insulator at room temperature the Fermi- Dirac factor is approximately equal to exp(-E 2kBT). (Typical Eg for semi-conductors ranges from about 0.5eV to 6eV at T-293K.) b. In heavily doped n-type silicon,...
Please clearly answer the following question showing all work,
each step, and the reasoning thereof.
16.1-7 Fermi Level of an Intrinsic Semiconductor. Given the expressions (16.1-12) and (161 13) for the thermal equilibrium carrier concentrations in the conduction and valence bands: (a) Determine an expression for the Fermi level E of an intrinsic semiconductor and show that it falls exactly in the middle of the bandgap only when the effective mass of the electrons me is precisely equal to the...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
1. (a) One kilogram of intrinsic silicon is to be doped to make n-type extrinsic silicon. In order to get Np = 1018/cm how many grams of phosphorous is needed? (10 points)
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Question 8 Pure silicon at room temperature has an electron number density of about 5 × 1015 m3 and an equal density of holes In the valence band. Suppose that one of every 10° silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and...
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