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1. (a) One kilogram of intrinsic silicon is to be doped to make n-type extrinsic silicon....
1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is...
1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is the number of intrinsic carriers (ni) in silicon if its temperature is elevated to 600'K2 (10 points) b) To achieve an N-type doping level of 10 cm3 using phosphorous how many grams of pure phosphorous has to be added to every kilogram of pure silicon? (density of silicon is 2328kg/m, and its atomic mass is 28, atomie mass of phosphorous is 31)/(15 points) c)...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and =...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion...
1.You have a piece of intrinsic silicon. explain how to convert it to n-type. 2.The depletion region is a region in the pn junction that is depleted from................. 3.Decreasing the amount of doping to an intrinsic semiconductor, causes the resistance of the doped silicon to................ 4.What is a p-type semiconductor? 5.As the amount of doping to an intrinsic semiconductor increases, the resistance of the doped silicon................
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500 cm2/Vs, respectively. Calculate the resistivity of the intrinsic semiconductor. The semiconductor is then doped by phosphorus to concentration of 1×1017 cm-3. Calculate the resistivity of the extrinsic semiconductor. Explain why the conductivity is improved in the latter case. Is this a p-type or n-type semiconductor? The intrinsic carrier concentration in silicon is 1.45×1010 cm-3. (10)
Silicon (4 valence electrons) can be doped with arsenic (5 valence electrons) to make an n-type...
Silicon (4 valence electrons) can be doped with arsenic (5 valence electrons) to make an n-type semiconductor. Assuming 1 in every 15 million silicon atoms is replaced with arsenic, calculate the carrier concentration, n, of the semiconductor. [Density of silicon = 2.33 g/cm3. Molar mass of silicon = 28.1 g mol–1.]
Consider a Hall-effect sensor using 50.0-μm-thick silicon, doped to make it an N-type semiconductor with free...
Consider a Hall-effect sensor using 50.0-μm-thick silicon, doped to make it an N-type semiconductor with free electron density 2.86×10^(15) electrons / cm^(3) With a sensor carrying 550-μA What is the maximum Hall potential at a point where the earths Magnetic field is 28.5 μT
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
1. MOSFET is made on silicon substrate doped with boron to a concentration of 5x1027 cm....
1. MOSFET is made on silicon substrate doped with boron to a concentration of 5x1027 cm. Silicon oxide layer of thickness 5 nm is used as an insulator. Gate electrode is made of n-type polysilicon doped to a concentration of 8x1018 cm Width and length of the transistor are 10 micrometer and 100 nm respectively. For this transistor find: a) saturation drain voltage at gate voltage 7 V; b) transconductance at gate voltage 6 V. 160 mev 140
1. (55 points total) a) Knowing that ni for silicon at 300'K is 1.5x1010 what is the number of intrinsic carriers (ni) in silicon if its temperature is elevated to 600'K2 (10 points) b) To achieve an N-type doping level of 10 cm3 using phosphorous how many grams of pure phosphorous has to be added to every kilogram of pure silicon? (density of silicon is 2328kg/m, and its atomic mass is 28, atomie mass of phosphorous is 31)/(15 points) c)...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
1. MOSFET is made on silicon substrate doped with boron to a concentration of 5x1027 cm. Silicon oxide layer of thickness 5 nm is used as an insulator. Gate electrode is made of n-type polysilicon doped to a concentration of 8x1018 cm Width and length of the transistor are 10 micrometer and 100 nm respectively. For this transistor find: a) saturation drain voltage at gate voltage 7 V; b) transconductance at gate voltage 6 V. 160 mev 140
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