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is the early voltage. i dont think that id necessary to solve the
question though....
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
Can I get help with part g through part r, please? Given the following Common-Emitter Amplifier...
Can I get help with part g through part r, please?
Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
can you do 4.83 Ar- Q Sea 100 V, what does the gain become? age at...
can
you do 4.83
Ar- Q Sea 100 V, what does the gain become? age at the collector. (b) Replacing the transistor by its T model, da the small-signal equivalent circuit of the a plifier. Analyze the resulting circuit to dete mine the voltage gain t/ 04.81 Consider the CE amplifier circuit of Fig. 4.43(a). It is required to design the circuit (i.e., find values for I and Rc) to meet the following specifications: (a) R,5kn (b) the voltage gain...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
x=4 Question 3: The parameters of both bjt are as follows: base emitter turn on voltage...
x=4
Question 3: The parameters of both bjt are as follows: base emitter turn on voltage is VBE,ON = 0.7 V, early voltage VA = 0, ac current gain B = 99. Small signal ac voltage source viis applied to the base of Q1 through a large capacitor. The resistors on the left branch are 63 X and 37xX2 (63 times X and 37 times X, note that these are not k2!!!). The remaining resistors are 4 k 2, 3...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
1.0 kn. RE-390 Ω, r-15 Ω. and ßac-75. 5. For a common-emitter amplifier, Rc Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is (a) 66.7 (d) 75 (b) 2.56 (c) 2....
1.0 kn. RE-390 Ω, r-15 Ω. and ßac-75. 5. For a common-emitter amplifier, Rc Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is (a) 66.7 (d) 75 (b) 2.56 (c) 2.47 6. In the circuit of Question 5, if the frequency is reduced to the point where Xctbypass) RE, the voltage gain (a) remains the same (b) is less (c) is greater 7. In a common-emitter amplifier with voltage-divider bias, Rimlbase) 68 k2, Ri 33...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits...
It Kind of goes without saying but if you have no knowledge than dont comment or try and answer this question you dope Questions 1-3 below are about the amplifier circuit of Figure 1. Here Vcc is a...
It
Kind of goes without saying but if you have no knowledge than dont
comment or try and answer this question you dope
Questions 1-3 below are about the amplifier circuit of Figure 1. Here Vcc is a fixed voltage The base voltage vB(t) is time-varying, and is of the form vB(t) V(t) where VB is a DC offset, and vb(t) is a time-varying purely AC signal. Suppose the amplitude of vb is A. Assume that the capacitor C is...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os,...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
Can I get help with part g through part r, please?
Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
can
you do 4.83
Ar- Q Sea 100 V, what does the gain become? age at the collector. (b) Replacing the transistor by its T model, da the small-signal equivalent circuit of the a plifier. Analyze the resulting circuit to dete mine the voltage gain t/ 04.81 Consider the CE amplifier circuit of Fig. 4.43(a). It is required to design the circuit (i.e., find values for I and Rc) to meet the following specifications: (a) R,5kn (b) the voltage gain...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
x=4
Question 3: The parameters of both bjt are as follows: base emitter turn on voltage is VBE,ON = 0.7 V, early voltage VA = 0, ac current gain B = 99. Small signal ac voltage source viis applied to the base of Q1 through a large capacitor. The resistors on the left branch are 63 X and 37xX2 (63 times X and 37 times X, note that these are not k2!!!). The remaining resistors are 4 k 2, 3...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
1.0 kn. RE-390 Ω, r-15 Ω. and ßac-75. 5. For a common-emitter amplifier, Rc Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is (a) 66.7 (d) 75 (b) 2.56 (c) 2.47 6. In the circuit of Question 5, if the frequency is reduced to the point where Xctbypass) RE, the voltage gain (a) remains the same (b) is less (c) is greater 7. In a common-emitter amplifier with voltage-divider bias, Rimlbase) 68 k2, Ri 33...
Question 1: 7.33 +15V 1O MO R-200k 16n 7k MO 7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits...
It
Kind of goes without saying but if you have no knowledge than dont
comment or try and answer this question you dope
Questions 1-3 below are about the amplifier circuit of Figure 1. Here Vcc is a fixed voltage The base voltage vB(t) is time-varying, and is of the form vB(t) V(t) where VB is a DC offset, and vb(t) is a time-varying purely AC signal. Suppose the amplitude of vb is A. Assume that the capacitor C is...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
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