You are asked to characterise a new intrinsic semiconductor. If the conductivity at 20°C and 100°C...
You are asked to characterise a new intrinsic semiconductor. If the conductivity at 20°C and 100°C is 250/?m and 1100/?m, respectively, what is the band gap energy? What assumptions did you need to make to calculate this energy?
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You are asked to characterise a new intrinsic semiconductor. If
the conductivity at 20°C and 100°C...
On increasing the temperature, the increase in conductivity of intrinsic semiconductor is due to (A) Decrease...
On increasing the temperature, the increase in conductivity of intrinsic semiconductor is due to (A) Decrease in band gap between valence band and conduction band (B) Increase in electrons in conduction band (C) Increase in negative charged electrons than positive holes in valence band (D) Increase in electrons in valence band
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
A) Show that the chemical potential in an intrinsic semiconductor lies in the middle of the gap a...
a) Show that the chemical potential in an intrinsic semiconductor lies in the middle of the gap at low temperature. (b) Explain how the chemical potential varies with temperature if the semiconductor is doped with (i) donors (ii) acceptors. (c) A direct-gap semiconductor is doped to produce a density of 1023electrons/m3. Calculate the hole density at room temperature given that the gap is 1.0 eV, and the effective mass of carriers in the conduction and valence band are 0.25 and...
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration ni than either silicon or GaAs. Do you expect the cond...
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration ni than either silicon or GaAs. Do you expect the conductivity of intrinsic germanium to be less than or greater than that of intrinsic silicon? How about compared to GaAs? Explain Why?
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration...
Here are the equations to use: Use Eq. (2) below to calculate the intrinsic number density...
Here are the equations to use:
Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 405 K. You may use the values of effective mass mp 1.04mo. 09m1 where m is the mass of a free electron and the band gap energy value E- 1.12 ev, The conductivity of a semiconductor material can be expressed by where q is the elementary charge, n the number density of conduction electrons, μη...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above...
A sample of an unknown elemental semiconductor had the following values of resistance at the give...
A sample of an unknown elemental semiconductor had the following
values of resistance at the given temperatures:
Calculate its band (energy) gap and, comparing this value with
published data, what is the likely semiconductor? Do you think your
calculated value is reasonable? Why/why not? (10 marks) Hint:
Remember the relationships between resistance, resistivity and
conductivity, then use the relevant conductivity equation for
plotting ln(1/R) vs 1000/T.
A sample of an unknown elemental semiconductor had the following values of resistance at...
Question 13 (7 marks) 13.1) (2 marks) Intrinsic semiconductor Germanium (Ge) has a bandgap of 0.67eV How do you expect...
Question 13 (7 marks) 13.1) (2 marks) Intrinsic semiconductor Germanium (Ge) has a bandgap of 0.67eV How do you expect the electrical resistivity of Intrinsic Ge to change as you increase its temperature from room temperature to one hundred degrees? 13.2) (1 mark) Pure Si is also an intrinsic semiconductor, but with a band gap of 1.11eV. How do you expect the electrical resistivity of Intrinsic Si to compare with that of Intrinsic Ge? 13.3) (2 marks) If we add...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Please help me out.. Need to pass this course as a removal for my other course.....
Please help me out.. Need to pass this course as a removal for
my other course..
Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
On increasing the temperature, the increase in conductivity of intrinsic semiconductor is due to (A) Decrease in band gap between valence band and conduction band (B) Increase in electrons in conduction band (C) Increase in negative charged electrons than positive holes in valence band (D) Increase in electrons in valence band
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration ni than either silicon or GaAs. Do you expect the conductivity of intrinsic germanium to be less than or greater than that of intrinsic silicon? How about compared to GaAs? Explain Why?
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration...
Here are the equations to use:
Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 405 K. You may use the values of effective mass mp 1.04mo. 09m1 where m is the mass of a free electron and the band gap energy value E- 1.12 ev, The conductivity of a semiconductor material can be expressed by where q is the elementary charge, n the number density of conduction electrons, μη...
A wire is made of an intrinsic semiconductor whose bandgap is 1.0eV. The wire is 0.05microns in diameter and 1 micron long. Electrons have a mobility of 1000/cm V-sec and holes have a mobility of 200/cm V-sec. The effective mass of an electron in the conduction band is 1.2 and that of a hole in the valence band is 0.6. The semiconductor operates at room temperature. a. What is the probability of finding an electron at an energy 0.5eV above...
A sample of an unknown elemental semiconductor had the following
values of resistance at the given temperatures:
Calculate its band (energy) gap and, comparing this value with
published data, what is the likely semiconductor? Do you think your
calculated value is reasonable? Why/why not? (10 marks) Hint:
Remember the relationships between resistance, resistivity and
conductivity, then use the relevant conductivity equation for
plotting ln(1/R) vs 1000/T.
A sample of an unknown elemental semiconductor had the following values of resistance at...
Question 13 (7 marks) 13.1) (2 marks) Intrinsic semiconductor Germanium (Ge) has a bandgap of 0.67eV How do you expect the electrical resistivity of Intrinsic Ge to change as you increase its temperature from room temperature to one hundred degrees? 13.2) (1 mark) Pure Si is also an intrinsic semiconductor, but with a band gap of 1.11eV. How do you expect the electrical resistivity of Intrinsic Si to compare with that of Intrinsic Ge? 13.3) (2 marks) If we add...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Please help me out.. Need to pass this course as a removal for
my other course..
Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
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