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Please only do 5.17:
5.17 Consider the junction described in Problem 5.1 1 . The junction...
please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
36. (15 pts) Calculate Vol in a silicon PN junction at T=300K for Ny=10cm N, -10cm...
36. (15 pts) Calculate Vol in a silicon PN junction at T=300K for Ny=10cm N, -10cm Determine the space charge width for an applied reverse bias voltage of 12V. Calculate the depletion layer capacitance for a cross-sectional area of 10 cm?
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A pl...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3....
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitanc...
All needed data is given. Please solve the problem ( CLEARLY
)
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X 10-3 cm2, find Vbi, No, DBN and the ideal metal work function.
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X...
Please answer question 2 part c 2. The following table is the reverse bias capacitance of...
Please answer question 2 part c
2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...
p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the...
p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the following parameters :N, 2x1016 cm-3,Nd-2x1 O18 cm's D,-25 crnVs, D,-10 cm?/sMr-2x10 po-10's. Assume a reverse bias voltage of VR-5 V is applied and assume a uniform generation rate of GL-1021 cm's-1 exists throughout the entire photodiode. Calculate the ratio of the prompt photocurrent density to the total steady state photocurrent density
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
36. (15 pts) Calculate Vol in a silicon PN junction at T=300K for Ny=10cm N, -10cm Determine the space charge width for an applied reverse bias voltage of 12V. Calculate the depletion layer capacitance for a cross-sectional area of 10 cm?
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
All needed data is given. Please solve the problem ( CLEARLY
)
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X 10-3 cm2, find Vbi, No, DBN and the ideal metal work function.
Problem 4: Schottky Diode-Small-Signal Capacitance Consider the following reverse-bias capacitance data for a Schottky diode (n-type silicon) 41/c 12 106 4 22 VA (volts) Given the Area-1.5 X...
Please answer question 2 part c
2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...
p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the following parameters :N, 2x1016 cm-3,Nd-2x1 O18 cm's D,-25 crnVs, D,-10 cm?/sMr-2x10 po-10's. Assume a reverse bias voltage of VR-5 V is applied and assume a uniform generation rate of GL-1021 cm's-1 exists throughout the entire photodiode. Calculate the ratio of the prompt photocurrent density to the total steady state photocurrent density
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