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This is fixed bias configuration.
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Midterm exam question, please can you solve carefully .
HOMEWORK 4 The transistor parameters in the...
+ 10 V / R2 8ko 는 Cc Cc 다 에 R 10 ko. 두 R3...
+ 10 V / R2 8ko 는 Cc Cc 다 에 R 10 ko. 두 R3 0 Q. -10 VY 2. For the circuit in given on the right, transistor parameters are V1 = 25 mV, VBE| = 0.7V hre=hfe=B=100 and Va=100 V. a) Design a current mirror for IcQ2 = 1mA. (5p) b) Neglecting the Early effect for Q1, find the DC voltages at the base, emitter, and collector. (10p) c) Without neglecting the Early effect for Q1 find...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
4. For the amplifier in the figure below use the parameters in the table: +Vcc Re VBE- 0.7V, Ri- ...
4. For the amplifier in the figure below use the parameters in the table: +Vcc Re VBE- 0.7V, Ri- 1002, R1-160k2, R2-320k2 R3-200k2, R6-40 k2, Rc-60k2, Vcc- 12V, Ry Do a) Draw the DC equivalent circuit and calculate the Q-point. c) Draw the AC equivalent circuit with the small signal model for the transistor. d) Calculate the voltage gain, Av-Vo/vi. Assume ro infinite. e) Draw the circuit to find the amplifier input resistance (Rin). Calculate Rin f Draw the circuit...
Please Solve ALL parts. For the amplifier below, the MOSFET has the following parameters: VIV, k...
Please Solve ALL parts.
For the amplifier below, the MOSFET has the following parameters: VIV, k 1) Show (prove) that the transistor operates in the saturation mode 2) Determine the operating point by finding In and VDs 3) Assume infinite values for the coupling capacitors and draw a small signal model for this amplifier ) Find gm and ro 5) Find the voltage gain (vo/vi) Find Ri 7) Find the current gain (ioli) VDD +12V RD- 10k2 Vo Vi lmA...
Answer A & B & C as fast as u can 1. The amplifie parameters for...
Answer A & B & C as fast as u can
1. The amplifie parameters for each transistor and circuit components are given in the figure, 100 for both Q1 and Q2, and VeEVEe 0.7V. VA 200V for Q1, and VAo for r of the following figure consists of two CE amplifiers connected in cascade. The consider the β and capacitor is very large. (120 pts) RI V. Q2 -4V culate corresponding DC currents (U-) and DC voltages (V-Vs) through...
x=4 Question 3: The parameters of both bjt are as follows: base emitter turn on voltage...
x=4
Question 3: The parameters of both bjt are as follows: base emitter turn on voltage is VBE,ON = 0.7 V, early voltage VA = 0, ac current gain B = 99. Small signal ac voltage source viis applied to the base of Q1 through a large capacitor. The resistors on the left branch are 63 X and 37xX2 (63 times X and 37 times X, note that these are not k2!!!). The remaining resistors are 4 k 2, 3...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteris...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
can someone help me with part c mpt tope alswersol the sdme part of you willbe penalized for this. Question 1 1 pts For the circuit shown in Figure 6.49, let Vcc -9V.RE 0.11 kQ, R1 3.6 k2, R2 5.6...
can someone help me with part c
mpt tope alswersol the sdme part of you willbe penalized for this. Question 1 1 pts For the circuit shown in Figure 6.49, let Vcc -9V.RE 0.11 kQ, R1 3.6 k2, R2 5.6k(2, and Rs -o Ω . The transistor parameters are β-200. VBE(On)-Q7V, VA - 100 V and VT 0.026 V.(a) Determine the quiescent value of lEQ. (b) Find the small-signal voltage gain Av-vo/vg (c) Determine the output resistance Ro looking into...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
+ 10 V / R2 8ko 는 Cc Cc 다 에 R 10 ko. 두 R3 0 Q. -10 VY 2. For the circuit in given on the right, transistor parameters are V1 = 25 mV, VBE| = 0.7V hre=hfe=B=100 and Va=100 V. a) Design a current mirror for IcQ2 = 1mA. (5p) b) Neglecting the Early effect for Q1, find the DC voltages at the base, emitter, and collector. (10p) c) Without neglecting the Early effect for Q1 find...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
4. For the amplifier in the figure below use the parameters in the table: +Vcc Re VBE- 0.7V, Ri- 1002, R1-160k2, R2-320k2 R3-200k2, R6-40 k2, Rc-60k2, Vcc- 12V, Ry Do a) Draw the DC equivalent circuit and calculate the Q-point. c) Draw the AC equivalent circuit with the small signal model for the transistor. d) Calculate the voltage gain, Av-Vo/vi. Assume ro infinite. e) Draw the circuit to find the amplifier input resistance (Rin). Calculate Rin f Draw the circuit...
Please Solve ALL parts.
For the amplifier below, the MOSFET has the following parameters: VIV, k 1) Show (prove) that the transistor operates in the saturation mode 2) Determine the operating point by finding In and VDs 3) Assume infinite values for the coupling capacitors and draw a small signal model for this amplifier ) Find gm and ro 5) Find the voltage gain (vo/vi) Find Ri 7) Find the current gain (ioli) VDD +12V RD- 10k2 Vo Vi lmA...
Answer A & B & C as fast as u can
1. The amplifie parameters for each transistor and circuit components are given in the figure, 100 for both Q1 and Q2, and VeEVEe 0.7V. VA 200V for Q1, and VAo for r of the following figure consists of two CE amplifiers connected in cascade. The consider the β and capacitor is very large. (120 pts) RI V. Q2 -4V culate corresponding DC currents (U-) and DC voltages (V-Vs) through...
x=4
Question 3: The parameters of both bjt are as follows: base emitter turn on voltage is VBE,ON = 0.7 V, early voltage VA = 0, ac current gain B = 99. Small signal ac voltage source viis applied to the base of Q1 through a large capacitor. The resistors on the left branch are 63 X and 37xX2 (63 times X and 37 times X, note that these are not k2!!!). The remaining resistors are 4 k 2, 3...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
can someone help me with part c
mpt tope alswersol the sdme part of you willbe penalized for this. Question 1 1 pts For the circuit shown in Figure 6.49, let Vcc -9V.RE 0.11 kQ, R1 3.6 k2, R2 5.6k(2, and Rs -o Ω . The transistor parameters are β-200. VBE(On)-Q7V, VA - 100 V and VT 0.026 V.(a) Determine the quiescent value of lEQ. (b) Find the small-signal voltage gain Av-vo/vg (c) Determine the output resistance Ro looking into...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
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