Problem 2 (15 points) In the circuit below, the transistor has B=50 and VEB = 0.7V....
Problem 3. In the circuit below, assuming has B = 100 and VEB=0.7V, find Ic, VB and Vc. VE+4V Rg=skn Rs1 Cas V. Rg=5 k12 M R = 4 22 Vºs-6V
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
answer i-iv please The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
2) Consider the circuit below. Assume B=49 A/A, VBe=0.7V, VCEsat=0.2V. If the Collector current is Ic = 9.8 mA, Find Vc, VE, VB and VBB; as well as the currents IE and IB. Hint: VBB>0. Verify your assumption. 15V V BB ic 3 Rc CS 30622 AVC RB 10k 2 B E → VE ięRE ES 33012
BJT DC Operating Points and AC small signal parameters. ) For the BJT circuit below, calculate the DC values for Vc, VB. VE, c, IB, and IE. Compute the AC small signal parameters gm, Tz, Te. Assume the transistor p-150, VBE 0.7V, and V 25.9mV 10V Vc Ic VB Is VeE R82 100kΩ RE1 100 RE22k0
Refer to the following circuit (Qi is a generic transistor), assuming ß = 200 when the transistor is in the active region. R1 47ΚΩ R3 3.3ΚΩ 12V Vcc Q1 R2 12k2 R4 1.0kΩ (a) If R, is open, calculate VB, VE, Vc. (15 points) (b) If R, is short, calculate IB, Ig and Vc. (15 points) (c) If R2 is short, calculate le and Vc. (15 points) (d) If Rz is short, calculate VB, Ic, and IB. (15 points) (e)...
(2+5 pts) Consider the bias circuit below for a transistor amplifier designed for active region operation. The desired bias point parameters are lg = 3 mA and Ic = 2.97 mA. Assume VBE- 0.7 V and VT=25 mV. Determine the emitter voltage VE . Choose the best answer. VCC +15 V Vc RBB VB LVE V BB RE 500 S2 1.49 V O2v 01.5V O 0.7V
(20 pts) The BJT in the circuit below has the following specifications: • in active mode ß = 50, VBE = 0.76 V, and • in saturation VCEsat = 0.2 V. Find VE, VB and Vc and determine the mode of operation (active, saturation, cut-off). Given values are: /= 1 mA, Rg=200 kN and Re =4 k12. I Vc RB VB. VEم RE
2. We will modify example 6.10 from the textbook during recitation #10 (11/14), by taking Re = 0, as shown in figure 2. When we make this modification, we will discover that the transistor will operate in saturation mode using the resistor values in example 6.10. ECE 342 Electronics I Homework # 10 Due Nov. 20, 2019 (Wednesday) a) Calculate the BJT terminal currents Ib, Ic and le, as well as the node voltages VB, Vc and Ve for Rsi...
Professor: Farid Tranjan +5 V Name:- 0.7V (50 points). Q1: For the BJT circuit, B- 100 and VE Find Re and Rg such that Ico =0.25 mA and VCEO b. Find the DCLL = 3 V a. R: 50 k0 So.1 kn Find the ACLL c. to find the maximum symmetrical swing in Vo Vo Draw the small-signal t-model and find the gain Ay d. Plot DCLLUACLL e. Vi Professor: Farid Tranjan +5 V Name:- 0.7V (50 points). Q1: For...