Question

2. The energy band diagram for an ideal xo-0.2um MOS-C operated at T-300K is sketched in Figure 1. Note that the applied gate voltage causes band bending in the semiconductor such that Ef Ei at the Si-SiO2 interface. a) Sketch the electrostatic potential () inside the semiconductor as a function of position b) Roughly sketch the electric field (5) inside the oxide and semiconductor as a function of position. c) Do equilibrium conditions prevail inside the semiconductor? Explain. d) Roughly sketch the electron concentration versus position inside the semiconductor. e) What is the electron concentration at the Si-SiO2 interface? ND-? i) What is the voltage drop across the oxide?
Need help with i) please!

Answer 1

-0.29 V (1) ν어tay drop acros the oxide layer is 0.78-0.9 0.49