Question

+ 1. Figure 1 illustrates the energy band diagram of a Metal-Oxide-Semiconductor (MOS). Based on the Figure 1 and the given parameters, Semicon surface Ec Figure 1 a) write the posson's equation that relates the potential and distance from the oxide-semiconductor interface b) write the mathematical relationship of the surface potential as a function of substrate doping concentration when the surface is under strong inversion condition c) write the equation for the maximum width of the surface depletion region as a function of substrate doping concentration and other related parameters e) Draw the charge distributions under inversion condition for Figure 1 1) Draw the electric field distribution for feel a) Draw the potential distribution for F1
Subject :

Semiconductor

topic MOS

Answer 1

From Me Griven dice! a) The potential op as a function to distance can be obtained one-dimensional poisson's equation. - Os(x) dig dar Es q NAW? 9:45 45 : Il- 2ES. b) surface potential afh of substrate doping concentration when the surface is under strong inversion condition. ulinv) 243 ni equ for max width of the surface rogion as af substrate doping concentration and other related quanders. Bes(Q4B) LKT In fn ob ( اوع 2 NA q NA d) chage distribution under Enverion condition fele) $) potential distribution 1947) 0 ܫ 9 -GNA ķ et و می eElectric fred distribution: (@«1/1er: Es CS Scand with a Campinner