Problem 1. An n-channel MOS transistor is fabricated with the following specifications: Substrate is a p-type...
Problem 1. An n-channel MOS transistor is fabricated with the following specifications: Substrate is a p-type silicon with doping concentration NA=2x1015 cm-3 . The SiO2 gate thickness is 200 Å. Effective interface charges Qi=6.5x10-9 col/cm2. Work function difference between gate conductor and silicon substrate qфms=-0.95 eV. Calculate the following:
a. Maximum depletion width, with respect to ground
b. Gate capacitance per unit area, Ci
c. Flat-band voltage, VFB
d. Threshold voltage, VT.
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Problem 1. An n-channel MOS transistor is fabricated with the
following specifications: Substrate is a p-type...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10°...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and a uniform positive oxide charge of density p- 2 x 106 cm3 throughout the oxide. The substrate is doped with Na-101" cm3 and the gate is polysilicon doped with boron just to the edge of degeneracy (p+ poly, Ef -Ev). a. Calculate the flat band voltage VB and the threshold voltage Vr b. Sketch the charge...
Problem 3: 6.1 An N-channel MOSFET with N+-polv gate is fabricated on a 15 Ω cm...
Problem 3: 6.1 An N-channel MOSFET with N+-polv gate is fabricated on a 15 Ω cm P-type Si wafer with oxide fisxed charge density-qxe2 wSo pm. L-2pm. Tax-5m (a) Determine the flat-band voltage, Vfb (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt 0.5 V from a device engineer 10-2 It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answers including...
Explain the answer 1. Consider the following MOSFET characteristics. What type of device is it? A....
Explain the answer
1. Consider the following MOSFET characteristics. What type of device is it? A. N-channel depletion-mode MOSFET B. N-channel enhancement-mode MOSFET. C. P-channel depletion-mode MOSFET. D. P-channel enhancement-mode MOSFET. Ip(mA) 1.5 1.0 0.5 V 00 V 0 0 2.0 4.0 6.0 Consider an n-channel MOSFET. Assuming no interface charge due to defects and/or traps, how would the the following parameters change when the oxide thickness is reduced? The flat band voltage VFB A. Increase B. Increase; c. Unchange:...
Problem 6: The energy band diagram for an ideal MOS-capacitor is shown below. tx 0.2 μm and Ep = E, at the Si-SiO2 interface. Assume no oxide charge and φ'm5-0. Answer the following. EpM Eps T...
Problem 6: The energy band diagram for an ideal MOS-capacitor is shown below. tx 0.2 μm and Ep = E, at the Si-SiO2 interface. Assume no oxide charge and φ'm5-0. Answer the following. EpM Eps Toz9ev 055ev a) What is the numerical value of the electron concentration at the Si-SiO2 interface? b) What is the substrate doping type and concentration? c) What is the electrostatic potential at the Si-SiO2 interface? d) What would be the depletion depth (width)? e) What...
In the silicon-based n-channel MOSMET. the work function of gate electrode 4a 4.08eV and the elec...
In the silicon-based n-channel MOSMET. the work function of gate electrode 4a 4.08eV and the electron affinity of silicon χ = 4.05eV. The fixed oxide charge located at Si-SiO2 interface has a density of 5x1014 m-2 . The silicon substrate is doped with boron atoms in a concentration of 2x10*°m3. The oxide layer has a thickness of 200nm. Calculate (i) the flat band voltage, (ii) the threshold voltage to induce the inversion layer and ii) the maximum, minimum and flat...
Q1 Which of the following is true for a MOS capacitor with a P-type body? Select...
Q1 Which of the following is true for a MOS capacitor with a P-type body? Select one: a. The charge in the inversion layer stays approximately constant as the gate voltage is increased above the threshold voltage b. The charge in the depletion region is proportional to the square root of the depletion region width, assuming that the body is uniformly doped c. In inversion, the total charge is equal to the sum of the charge in the depletion region...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total n...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total negative oxide charge of 5x 1011q C/cm . Substrate is n-type Si, with doping concentration 1 x1016 cm-3 Oxide thickness 5 nmm The electron affinity for Si is 4.03eV? e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and a uniform positive oxide charge of density p- 2 x 106 cm3 throughout the oxide. The substrate is doped with Na-101" cm3 and the gate is polysilicon doped with boron just to the edge of degeneracy (p+ poly, Ef -Ev). a. Calculate the flat band voltage VB and the threshold voltage Vr b. Sketch the charge...
Problem 3: 6.1 An N-channel MOSFET with N+-polv gate is fabricated on a 15 Ω cm P-type Si wafer with oxide fisxed charge density-qxe2 wSo pm. L-2pm. Tax-5m (a) Determine the flat-band voltage, Vfb (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt 0.5 V from a device engineer 10-2 It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answers including...
Explain the answer
1. Consider the following MOSFET characteristics. What type of device is it? A. N-channel depletion-mode MOSFET B. N-channel enhancement-mode MOSFET. C. P-channel depletion-mode MOSFET. D. P-channel enhancement-mode MOSFET. Ip(mA) 1.5 1.0 0.5 V 00 V 0 0 2.0 4.0 6.0 Consider an n-channel MOSFET. Assuming no interface charge due to defects and/or traps, how would the the following parameters change when the oxide thickness is reduced? The flat band voltage VFB A. Increase B. Increase; c. Unchange:...
Problem 6: The energy band diagram for an ideal MOS-capacitor is shown below. tx 0.2 μm and Ep = E, at the Si-SiO2 interface. Assume no oxide charge and φ'm5-0. Answer the following. EpM Eps Toz9ev 055ev a) What is the numerical value of the electron concentration at the Si-SiO2 interface? b) What is the substrate doping type and concentration? c) What is the electrostatic potential at the Si-SiO2 interface? d) What would be the depletion depth (width)? e) What...
In the silicon-based n-channel MOSMET. the work function of gate electrode 4a 4.08eV and the electron affinity of silicon χ = 4.05eV. The fixed oxide charge located at Si-SiO2 interface has a density of 5x1014 m-2 . The silicon substrate is doped with boron atoms in a concentration of 2x10*°m3. The oxide layer has a thickness of 200nm. Calculate (i) the flat band voltage, (ii) the threshold voltage to induce the inversion layer and ii) the maximum, minimum and flat...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total negative oxide charge of 5x 1011q C/cm . Substrate is n-type Si, with doping concentration 1 x1016 cm-3 Oxide thickness 5 nmm The electron affinity for Si is 4.03eV? e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential...
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