D Question 7 1 pts A diode has a reverse saturation current of 10 pA and...
1. The reverse current in a diode has a value of 71.8 nA when the reverse voltage across the diode is 324.99 V. If the breakdown voltage of the diode is 325 V, and its saturation current is 11.0 pA, calculate the value of n for this diode. Ans. (2-12 Bogart) n 4.979 2. For the circuit below with silicon diodes, which diodes are forward-biased and which are revers- biased? Is current flowing through the resistor? If so, draw a...
Answer with clear writing please 5. Consider an idealized diode with a reverse saturation current 0.01 mA and an abrupt turn-on voltage of 0.7 V (assume no breakdown and operation away from the knee of the diode curve). For the circuit shown, both resistors are 100 Ω, the constant source is VP-7.0 V, and the time- dependent source is Vs 24 sin() V. Calculate (a) the peak positive voltage V and the associated current through the diode and (b) the...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
please help Question 1 Consider the following circuit, where the reverse saturation current (Is) is the same for each diode. D2 o Vo Di Vi WWW R 32 23 a. b. Determine an algebraic expression for V1, for a given Vo, and Is. Given an Is of 40 FA and R1 = 3.3 kl , determine the Vi that produces an output voltage (V.) of 0.625 V. C. Recalculate question-b if Is were to be a thousand times greater at...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
Problem 2 The diode in the circuit below has a saturation current Is = 10-13 A and n=1. Its ID-VD curve is illustrated below for your convenience. a) Using the graphical method, determine the value of R that would result in a diode current Ip 4mA. What is the resulting voltage Vp? b) With R as calculated above, a sinusoidal signal v, 100 sin(ot) mV is superimposed on the DC source. Draw the small signal model and find the output...
Design an abrupt Sip+-n junction diode that has a reverse breakdown voltage of 130 V andhas a forward-bias current of 2.2 mA at V = 0.7 volt. Assume tp = l0^-7 s.
The diode in the circuit below has a saturation current Is-10-13 A and n=1. Its ID-VD curve is illustrated below for your convenience. Problem 2 a) Using the graphical method, determine the value of R that would result in a diode current Ip -4mA. What is the resulting voltage Vp? b) With R as calculated above, a sinusoidal signal v, 100 sin(cot) mV is superimposed on the DC source. Draw the small signal model and find the output voltage across...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the...
Question 1 1 pts Consider a standard diode shown below. Check all the statements that are true for diodes and diode circuits.ID ip + V- In the forward bias region, the diode current ip is positive. Diodes are made by connecting a p-doped material to an n-doped material, creating a depletion region that causes a barrier to the flow of electricity when the diode is reverse biased. In the non-conducting (or OFF) state of an ideal diode, the diode voltage,...