1. The reverse current in a diode has a value of 71.8 nA when the reverse...
D Question 7 1 pts A diode has a reverse saturation current of 10 pA and has n-1 and is operating at room temperature. Find the voltage drop in volts at a current of 4 mA D Question 8 1 pts A diode has n 1 and is operating at room temperature. When carrying a current of 14 mA the terminal voltage is measured at 0.65 V. What is the saturation current in pA? DQuestion9 1 pts A diode has...
2. Sketch Vout VS Vin and Vout if Vin-10sin(2TT60t) for each of the following circuits. You may assume that the forward diode drops for the diodes equals zero Vout s v out Vin 5 V Vout out 3. Repeat problem 2 but with forward diode drops equal to 0.7 V 4. What are the primary mechanisms for current flow in a. A forward biased diode. b. A reverse biased diode not in breakdown. c. A reverse biased diode in breakdown...
1. Draw the current-voltage characteristic of a Zener diode and show the forward and reverse biasing areas. Mark the "Zener voltage" value on the graph. Explain how the voltage on the Zener diode will vary when it is biased with a voltage higher than the Zener voltage. 2. Explain the operating principle of a full-wave bridge rectifier by clarifying which diodes becomes active during the positive and negative cycles of the input signal.
Question 1 1 pts Consider a standard diode shown below. Check all the statements that are true for diodes and diode circuits.ID ip + V- In the forward bias region, the diode current ip is positive. Diodes are made by connecting a p-doped material to an n-doped material, creating a depletion region that causes a barrier to the flow of electricity when the diode is reverse biased. In the non-conducting (or OFF) state of an ideal diode, the diode voltage,...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
4. Design a clamp circuit to clamp the negative extreme of a periodic input waveform of 10 sin(100πt)V to −5 V. Use 1 diode, 1 Zener diode, 1 resistor, and 1 capacitor of suitable values. Provide following minimum ratings of the selected components. (a) Diode - Maximum reverse voltage, peak forward current (b) Zener - Zener voltage, Zener current (c) Resistor - Resistance, power rating (d) capacitor - capacitance, Maximum voltage Assume a 0.6 V forward drop for all diodes...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Answer with clear writing please 5. Consider an idealized diode with a reverse saturation current 0.01 mA and an abrupt turn-on voltage of 0.7 V (assume no breakdown and operation away from the knee of the diode curve). For the circuit shown, both resistors are 100 Ω, the constant source is VP-7.0 V, and the time- dependent source is Vs 24 sin() V. Calculate (a) the peak positive voltage V and the associated current through the diode and (b) the...