Q1. In which regions of an ??? transistor is the main electron current a drift current...
Q1. In which regions of an ??? transistor is the main electron
current a drift current and in
which regions a diffusion current? Explain your answer.
Homework Answers
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Q1. In which regions of an ??? transistor is the main electron
current a drift current...
1) Describe and explain drift current and diffusion current in a PN junction in thermal equilibrium....
1) Describe and explain drift current and diffusion current in a PN junction in thermal equilibrium. What causes each? In which directions are the electrons, holes, electron current, and hole current flowing for each effect? What is the net current? Assume the built-in E-Field points to the left. Use a diagram. Then describe what changes when an electric field is applied, positive side on the N terminal. Describe what happens when the magnitude of that field is reversed. 2) Describe...
i don't get it why the whole current is like that can u explain in detail? Find the electron diffusion and drift...
i don't get it why the whole current is like
that
can u explain in detail?
Find the electron diffusion and drift currents at x, in ap*-n junction D q-V kT for V? kT e P L2 v.b x)I q-V D. ид. "а. .V.b-(0"x) I = I L Assuming space charge neutrality, the excess hole distribution is equal to the excess electron distribution on(x) = op(x) q-V dбр IXiqAD dx kT Pm e diff q-V I (x I (x)-(x) A...
The electron and hole currents inside a pnp BJT biased in the active mode are plotted below. All the currents are referenced to Ii, the hole current inj c cted Determine: (a) The emitter efficiency (...
The electron and hole currents inside a pnp BJT biased in the active mode are plotted below. All the currents are referenced to Ii, the hole current inj c cted Determine: (a) The emitter efficiency (); (b) The base transport factor (a) (c) The common emitter d.c. current gain (Bac); (d) The base current (IB). (e) For the given transistor, is the recombination-generation current arising from the depletion regions negligible as assumed in the ideal transistor analysis? Explain. Hole current...
Shown below is an ideal Tunnel Field Effect Transistor (TFET). The p and n regions are...
Shown below is an ideal Tunnel Field Effect Transistor (TFET).
The p and n regions are non-degenerately doped
with dopant concentrations of 1014 cm-3 and 1015 cm-3,
respectively. The intrinsic carrier concentration in the
semiconductor i
Shown below is an ideal Tunnel Field Effect Transistor (TFET). The p and n regions are non-degenerately doped with dopant concentrations of 10 cm3 and 1015 cm3, respectively. The intrinsic carrier concentration in the semiconductor is 1010 cm3. The surface potential ,increases the band...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measur...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
the emf provided by the battery is 12.6 V 1 Current Density and Drift Speed a)...
the emf provided by the battery
is 12.6 V
1 Current Density and Drift Speed a) (8 pts) A group of charges, each with charge q, moves with velocity v. The number of particles per unit volume is n. What is the current density J of these charges, in magnitude and direction? Make sure that your answer has units of Alm b) (8 pts) We want to calculate how long it takes an electron to get from a car battery...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
Estimate the electron drift velocity Express your answer using two significant figures. A 0.62-mm -diameter copper...
Estimate the electron drift velocity Express your answer using two significant figures. A 0.62-mm -diameter copper wire carries a tiny current of 2.5 勺 @a ? m/s Submit Request Answer Part B Estimate the ourrent density Express your answer using two significant figures A/㎡ Submit Request Answer PartC Estimate the electric field in the wire. Express your answer using two significant figures V/m
Help please Current Density and Drift Speed A group of charges, each with charge q, moves...
Help please
Current Density and Drift Speed A group of charges, each with charge q, moves with velocity v^vector. The number of particles per unit volume is n. What is the current density J^vector of these charges, in magnitude and direction? Make sure that your answer has units of A/m^2. We want to calculate how long it takes an electron to get from a car battery to the starter motor after the ignition switch is turned. Assume that the current...
Please show all the steps. thank you for your help Question) Estimate the drift velocity of an electron through the Al wire [R=0.0283 Ω, L= 1 m and μ=1.22x 10-3 m2/(V-s)]. The current flowing through...
Please show all the steps. thank you for your help
Question) Estimate the drift velocity of an electron through the Al wire [R=0.0283 Ω, L= 1 m and μ=1.22x 10-3 m2/(V-s)]. The current flowing through the wire is 3 A.
Question) Estimate the drift velocity of an electron through the Al wire [R=0.0283 Ω, L= 1 m and μ=1.22x 10-3 m2/(V-s)]. The current flowing through the wire is 3 A.
i don't get it why the whole current is like
that
can u explain in detail?
Find the electron diffusion and drift currents at x, in ap*-n junction D q-V kT for V? kT e P L2 v.b x)I q-V D. ид. "а. .V.b-(0"x) I = I L Assuming space charge neutrality, the excess hole distribution is equal to the excess electron distribution on(x) = op(x) q-V dбр IXiqAD dx kT Pm e diff q-V I (x I (x)-(x) A...
The electron and hole currents inside a pnp BJT biased in the active mode are plotted below. All the currents are referenced to Ii, the hole current inj c cted Determine: (a) The emitter efficiency (); (b) The base transport factor (a) (c) The common emitter d.c. current gain (Bac); (d) The base current (IB). (e) For the given transistor, is the recombination-generation current arising from the depletion regions negligible as assumed in the ideal transistor analysis? Explain. Hole current...
Shown below is an ideal Tunnel Field Effect Transistor (TFET).
The p and n regions are non-degenerately doped
with dopant concentrations of 1014 cm-3 and 1015 cm-3,
respectively. The intrinsic carrier concentration in the
semiconductor i
Shown below is an ideal Tunnel Field Effect Transistor (TFET). The p and n regions are non-degenerately doped with dopant concentrations of 10 cm3 and 1015 cm3, respectively. The intrinsic carrier concentration in the semiconductor is 1010 cm3. The surface potential ,increases the band...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
the emf provided by the battery
is 12.6 V
1 Current Density and Drift Speed a) (8 pts) A group of charges, each with charge q, moves with velocity v. The number of particles per unit volume is n. What is the current density J of these charges, in magnitude and direction? Make sure that your answer has units of Alm b) (8 pts) We want to calculate how long it takes an electron to get from a car battery...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
Estimate the electron drift velocity Express your answer using two significant figures. A 0.62-mm -diameter copper wire carries a tiny current of 2.5 勺 @a ? m/s Submit Request Answer Part B Estimate the ourrent density Express your answer using two significant figures A/㎡ Submit Request Answer PartC Estimate the electric field in the wire. Express your answer using two significant figures V/m
Help please
Current Density and Drift Speed A group of charges, each with charge q, moves with velocity v^vector. The number of particles per unit volume is n. What is the current density J^vector of these charges, in magnitude and direction? Make sure that your answer has units of A/m^2. We want to calculate how long it takes an electron to get from a car battery to the starter motor after the ignition switch is turned. Assume that the current...
Please show all the steps. thank you for your help
Question) Estimate the drift velocity of an electron through the Al wire [R=0.0283 Ω, L= 1 m and μ=1.22x 10-3 m2/(V-s)]. The current flowing through the wire is 3 A.
Question) Estimate the drift velocity of an electron through the Al wire [R=0.0283 Ω, L= 1 m and μ=1.22x 10-3 m2/(V-s)]. The current flowing through the wire is 3 A.
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