The circuit in Figure 3 is a sampling circuit used in A/D converters
a) The circuit in Figure 3 is a sampling circuit used in A/D converters. Determine the on-resistance, Ron, of the MOSFET (switch). What is the time constant for CL = 1 pF?
b) An enhancement MOSFET has the following parameters; W = 50 μm, L = 1 μm,Cox=10 fF/um2, and Cov = 2 fF/um. Assume MOSFET is operating in saturation region. Calculate Cgs and Cgd.
Homework Answers
In saturation Region
Gate to Source Capacitance is
that is
433.33 fF
and in saturation Region
Cgd = WCov
=
= 100 fF
for different operating region value of capacitance of MOSFET can be calculated using following Graph
Add Answer to:
The circuit in Figure 3 is a sampling circuit used in A/D converters
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is...
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V
6. Find the midband gain Ay and the 3-dB (high) frequency of a MOS cascoding amplifier...
6. Find the midband gain Ay and the 3-dB (high) frequency of a MOS cascoding amplifier as shown in the following circuit. The MOSFET device parameters are as follows: (Consider Qand Q2 are the same.) g. = 1.2 mA/V. r. = 100 k82; Cos = 20 fF, Cgd = 8 fF, and Cab = 10 fF. The source has a large Rsig = 50 k 2. On the load side, R = 2 M, and CL = 50 fF. (Hint:...
All lower and upper of the booster circuit with FET in the figure find the cutoff...
All lower and upper of the booster circuit with FET in the figure find the cutoff frequencies. As a result of all the circuit.Determine the valid lower and upper cutting frequency for. Note: The output resistance of the FET is large enough to be neglected 20 V Cw Cw. 4 pF Cgd = 8 pF = 6 pF Cgs = 12 pF Cds = 3pF 3.9 ks2 220 k12 W 6.8 uF It V 1.5 k12 V wta TuF I...
Calculate the values of ID and VSG in the circuit using Table 1. 10/1 5 V...
Calculate the values of ID and VSG in the circuit using Table
1.
10/1 5 V 100k Long-channel MOSFET parameters for general analog design VDD 5 V and a scale factor of 1 um (scale = le-6) Parameter Comments NMOS PMOS Bias current, I, 20 μΑ 20 μΑ Approximate Selected based on I, and Vns cat W/L 10/2 30/2 DSeat VDSsar and V For sizes listed 250 mV 250 mV SDsat 1.05 V No body effect Vs and V 1.15...
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the...
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the following parameters: K'-1 mA/V2 and λ-0.02 w. v°' is a small signal AC voltage ource 8V 8V Vout Ra 2.56 mA Fig. Q6 (a) Calculate the DC gate voltage, Va. (b) Assuming that the n-MOSFET is operating in the saturation region and neglecting channel length modulation, calculate the threshold voltage, VrHN, given that the voltage drop across the de current sorce, Inas, has been...
ignore symbols! =0 3. The values of the circuit elements in Figure 3 are as follows:...
ignore symbols! =0
3. The values of the circuit elements in Figure 3 are as follows: Vpp = (5000+a) mV, Rs1 = (5000+B), Roi = (20000+y), RG1 = (15000+8), Ro2 = (35000+E), C = 10 uF. Vint = 100 sin (20000mt) mV. The MOSFET parameters of M1 are: Vtp = -(500+) mV, Hp Cox = 100 VIA?, (W/L), = 8 um/1 um, Apl = 0.01 V. Calculate the DC component of Vouti (5 points) and small-signal component of Vouti (5...
An analogue amplifier circuit is shown in Figure 1 below. VDD Q5 15V JL - Vout...
An analogue amplifier circuit is shown in Figure 1 below. VDD Q5 15V JL - Vout Irer RI Vina JET T7T Figure 1 Integrated amplifier circuit. Circuit Data: Vpp = 15 V, IREF = I1 = I2 = 1.0 mA Transistor Data: Q1: NMOS, un Cox = 80 A/V?, W/L = 100 um/0.8 um, Vtn = 0.8 V, L = 0.10 um/V Q2: NPN BJT, B = 100, Vbe = 0.7 V, VA = 150 V Q3, Q4: NMOS, un...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NM...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
Homework 4 Due: June 26, 2019, at 5 pm. Note: Show all steps required to get...
Homework 4 Due: June 26, 2019, at 5 pm. Note: Show all steps required to get to your answers and make sure to box them. Writing down answers to questions asked without any explanation(s) will not do it. Clarity should be a priority Moreover, the assigned textbook for this class is Sedra and Smith, Microelectronic Circuits, Seventh Edition, Oxford University Press. Make sure you have the proper book Reminder: In class, we have expressed the overall voltage gain of a...
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V
6. Find the midband gain Ay and the 3-dB (high) frequency of a MOS cascoding amplifier as shown in the following circuit. The MOSFET device parameters are as follows: (Consider Qand Q2 are the same.) g. = 1.2 mA/V. r. = 100 k82; Cos = 20 fF, Cgd = 8 fF, and Cab = 10 fF. The source has a large Rsig = 50 k 2. On the load side, R = 2 M, and CL = 50 fF. (Hint:...
All lower and upper of the booster circuit with FET in the figure find the cutoff frequencies. As a result of all the circuit.Determine the valid lower and upper cutting frequency for. Note: The output resistance of the FET is large enough to be neglected 20 V Cw Cw. 4 pF Cgd = 8 pF = 6 pF Cgs = 12 pF Cds = 3pF 3.9 ks2 220 k12 W 6.8 uF It V 1.5 k12 V wta TuF I...
Calculate the values of ID and VSG in the circuit using Table
1.
10/1 5 V 100k Long-channel MOSFET parameters for general analog design VDD 5 V and a scale factor of 1 um (scale = le-6) Parameter Comments NMOS PMOS Bias current, I, 20 μΑ 20 μΑ Approximate Selected based on I, and Vns cat W/L 10/2 30/2 DSeat VDSsar and V For sizes listed 250 mV 250 mV SDsat 1.05 V No body effect Vs and V 1.15...
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the following parameters: K'-1 mA/V2 and λ-0.02 w. v°' is a small signal AC voltage ource 8V 8V Vout Ra 2.56 mA Fig. Q6 (a) Calculate the DC gate voltage, Va. (b) Assuming that the n-MOSFET is operating in the saturation region and neglecting channel length modulation, calculate the threshold voltage, VrHN, given that the voltage drop across the de current sorce, Inas, has been...
ignore symbols! =0
3. The values of the circuit elements in Figure 3 are as follows: Vpp = (5000+a) mV, Rs1 = (5000+B), Roi = (20000+y), RG1 = (15000+8), Ro2 = (35000+E), C = 10 uF. Vint = 100 sin (20000mt) mV. The MOSFET parameters of M1 are: Vtp = -(500+) mV, Hp Cox = 100 VIA?, (W/L), = 8 um/1 um, Apl = 0.01 V. Calculate the DC component of Vouti (5 points) and small-signal component of Vouti (5...
An analogue amplifier circuit is shown in Figure 1 below. VDD Q5 15V JL - Vout Irer RI Vina JET T7T Figure 1 Integrated amplifier circuit. Circuit Data: Vpp = 15 V, IREF = I1 = I2 = 1.0 mA Transistor Data: Q1: NMOS, un Cox = 80 A/V?, W/L = 100 um/0.8 um, Vtn = 0.8 V, L = 0.10 um/V Q2: NPN BJT, B = 100, Vbe = 0.7 V, VA = 150 V Q3, Q4: NMOS, un...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
Homework 4 Due: June 26, 2019, at 5 pm. Note: Show all steps required to get to your answers and make sure to box them. Writing down answers to questions asked without any explanation(s) will not do it. Clarity should be a priority Moreover, the assigned textbook for this class is Sedra and Smith, Microelectronic Circuits, Seventh Edition, Oxford University Press. Make sure you have the proper book Reminder: In class, we have expressed the overall voltage gain of a...
Most questions answered within 3 hours.
-
1. When can parametric and non-parametric statistical tests be
used?
A. Parametric?
The independent variable is...
asked 6 minutes ago -
How can bacteria resist killing from cationic antimicrobial
peptides (CAMPs)? Choose all that apply. a. Use...
asked 13 minutes ago -
As an economic term, what is the definition of :Technological
Trends? Please try and keep the...
asked 14 minutes ago -
Labor demand will be less elastic in those labor markets in
which:
A.
the price elasticity...
asked 15 minutes ago -
5 situations are listed below and 8 reduction chemicals are
listed A-H below, match the letters...
asked 21 minutes ago -
1. If more spouses decide to quit their jobs to stay home with
their young children...
asked 24 minutes ago -
Please use algebraic manipulation to prove the following
statement:
x'y'z' + x'yz' + x'yz + xyz'...
asked 25 minutes ago -
3.Another patient has a family history in which:
1. the disease was equally distributed among the...
asked 28 minutes ago -
If you are the TM of a shipper of cooking oil the sales
department wants to...
asked 26 minutes ago -
NEED THIS URGENTLY PLEASEEE
Suppose a fair coin is tossed 5 times and the result are...
asked 35 minutes ago -
Find the magnetic field B produced by several circular loops of
which has a radius given...
asked 43 minutes ago -
A mole of monatomic ideal gas is expanded from 0.45 L to 0.75L
at an external...
asked 42 minutes ago